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Improved Uniformity of Reacted GaAs Contacts by Interface Mixing

Published online by Cambridge University Press:  26 February 2011

C. J. Palmrøm ,
K. L. Kavanagh ,
M. J. Hollis ,
S. D. Mukherjee  and
J. W. Mayer
C. J. Palmrøm
Affiliation:
Materials Science and Engineering, Bard Hall. Cornell University, Ithaca. N.Y. 14853
K. L. Kavanagh
Affiliation:
School of Electrical Enaineering, Phillips Hall, Cornell University, Ithaca. N.Y. 14853 present address MIT Lincoln Labs
M. J. Hollis
Affiliation:
Materials Science and Engineering, Bard Hall. Cornell University, Ithaca. N.Y. 14853
S. D. Mukherjee
Affiliation:
School of Electrical Enaineering, Phillips Hall, Cornell University, Ithaca. N.Y. 14853 present address MIT Lincoln Labs
J. W. Mayer
Affiliation:
Materials Science and Engineering, Bard Hall. Cornell University, Ithaca. N.Y. 14853
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Abstract

Ion beam mixing is used to produce more uniform Au.Au-Ge and Au-Ge-Ni reacted contacts to GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 473
Copyright
Copyright © Materials Research Society 1985

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References

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