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In Situ Analysis of Surface Contaminant Desorption during Low-Temperature Silicon Substrate Cleaning using Reflection Electron Energy Loss Spectrometry

Published online by Cambridge University Press:  25 February 2011

Selmer S. Wong ,
Shouleh Nikzad ,
Channing C. Ahn ,
Aimee L. Smith  and
Harry A. Atwater
Selmer S. Wong
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
Shouleh Nikzad
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
Channing C. Ahn
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
Aimee L. Smith
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
Harry A. Atwater
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
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Abstract

We have employed reflection electron energy loss spectrometry (REELS), a surface chemical analysis technique, in order to analyze contaminant coverages at the submonolayer level during low-temperature in situ cleaning of hydrogen-terminated Si(100). The chemical composition of the surface was analyzed by measurements of the C K, O K and Si L2,3 core loss intensities at various stages of the cleaning. These results were quantified using SiC(100) and SiO2 as reference standards for C and O coverage. Room temperature REELS core loss intensity analysis after sample insertion reveals carbon at fractional monolayer coverage. We have established the REELS detection limit for carbon coverage to be 5±2% of a monolayer. A study of temperature-dependent hydrocarbon desorption from hydrogen-terminated Si(100) reveals the absence of carbon on the surface at temperatures greater than 200°C. This indicates the feasibility of epitaxial growth following an in situ low-temperature cleaning and also indicates the power of REELS as an in situ technique for assessment of surface cleanliness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 449
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1.See, for example, Fitzgerald, E.A., Xie, Y.H., Green, M.L., Brasen, D., Kortan, A.R., Mii, Y.J., Michel, J., Weir, B.E., Feldman, L.C. and Kuo, J.M., Mat. Res. Soc. Symp. Proc. 220, 211–215 (1991).CrossRefGoogle Scholar
2. Nikzad, S., Ahn, C.C., and Atwater, H.A., J. Vac. Sci. Technol. B 10(2), 762 (1992).Google Scholar
3. Atwater, H.A. and Ahn, C.C., Appl. Phys. Lett. 58(3), 269 (1991).Google Scholar
4. Schaefer, J.A., Physica B 170, 45–68 (1991).Google Scholar
5. Grunthaner, P.J., Grunthaner, F.J., Fathauer, R.W., Lin, T.L., Hecht, M.H., Bell, L.D., Kaiser, W.J., Schowengerdt, F.D. and Mazur, J.H., Thin Solid Films 183, 197–212 (1989).Google Scholar
6. Eaglesham, D.J., Higashi, G.S. and Cerullo, M., Appl. Phys. Lett. 59(6), 685 (1991).Google Scholar
7. Egerton, R.F., Electron Energy Loss Spectroscopy in the Electron Microscope (Plenum Press, New York, 1986).Google Scholar
8. Leapman, R., Transmission Electron Energy Loss Soectrometrv in Materials Science, eds. Disko, M.M., Ahn, C.C., and Fultz, B. (TMS, Warrendale, Pennsylvania, 1992 (in press)), Chap. 3.Google Scholar