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In situ SEM Observation of Grain Formation and Growth Induced by Electrical Pulses in Lateral Ge2Sb2Te5 Phase-change Memory

Published online by Cambridge University Press:  01 February 2011

You Yin ,
Daisuke Niida ,
Kazuhiro Ohta ,
Akihira Miyachi ,
Masahiro Asai ,
Naoya Higano ,
Hayato Sone  and
Sumio Hosaka
You Yin
Affiliation:
yinyou@el.gunma-u.ac.jp, Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin, Kiryu, Gunma, Kiryu, 376-8515, Japan, +81-277-30-1723, +81-277-30-1707
Daisuke Niida
Affiliation:
ready_go_danieru@hotmail.com, Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin,, Kiryu, Gunma, 376-8515, Japan
Kazuhiro Ohta
Affiliation:
bar-ebhoth@docomo.ne.jp, Gunma University, Department of Electronic Engineering, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan
Akihira Miyachi
Affiliation:
a_miyachi@yahoo.co.jp, Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan
Masahiro Asai
Affiliation:
papet_master@hotmail.com, Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan
Naoya Higano
Affiliation:
mukaino77@hotmail.co.jp, Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan
Hayato Sone
Affiliation:
sone@el.gunma-u.ac.jp, Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan
Sumio Hosaka
Affiliation:
hosaka@el.gunma-u.ac.jp, Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan
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Abstract

A study of electric-pulse-induced crystallization of Ge2Sb2Te5 (GST) was conducted by in situ scanning electron microscopy observation and resistance measurement. A lateral phase-change memory with a top GST channel connected by two separate underlying electrodes was adopted in this study to easily observe the crystallization process. At a low voltage pulse, randomly distributed nuclei were initiated. At the first growth stage, these nuclei grew fast with the pulse amplitude at a rate of around 60 nm/V and then growth rate slowed down to around 14 nm/V when the grain diameter was closed to film thickness. Device resistance during crystallization dropped by around one order of magnitude, which should be due to amorphous to face-centered-cubic transition.

Keywords

amorphousphase transformationmemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I12-05
Copyright
Copyright © Materials Research Society 2007

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References

1. Ovshinsky, S. R., Phys. Rev. Lett. 21, 1450 (1968).Google Scholar
2. Lai, S., Lowrey, T., IEDM Tech. Dig., 803, 2001.Google Scholar
3. Yin, Y., Sone, H., Hosaka, S., Jpn. J. Appl. Phys. 45, 8600 (2006).Google Scholar
4. Yin, Y., Sone, H., Hosaka, S., Jpn. J. Appl. Phys. 45, 4951 (2006).Google Scholar
5. Lacaita, A. L., Solid-State Electronics 50, 24 (2006).Google Scholar
6. Yin, Y., Sone, H., Hosaka, S., Jpn. J. Appl. Phys. 45, 6177 (2006).Google Scholar
7. Privitera, S., Bongiorno, C., Rimini, E., Zonca, R., Appl. Phys. Lett. 84, 4448 (2004).Google Scholar
8. Kalb, J., Spaepen, F., Wuttig, M., Appl. Phys. Lett. 84 5240 (2004).Google Scholar
9. Weidenhof, V., Friedrich, I., Ziegler, S., Wuttig, M., J. Appl. Phys. 89, 3168 (2001).Google Scholar
10. Jeong, T. H., Kim, M. R., Sang, H. S., Kim, J., Kim, S. Y., J. Appl. Phys. 86, 774 (1999).Google Scholar
11. Kooi, B. J., Groot, W., Hosson, J. D., J. Appl. Phys. 95, 924 (2004).Google Scholar
12. Yin, Y., Miyachi, A., Niida, D., Sone, H., Hosaka, S., Jpn. J. Appl. Phys. 45, L726 (2006).Google Scholar
13. Thompson, C.V., Annual Review of Materials Science, 20, 245 (1990).Google Scholar