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In Situ Stress Measurements during the reaction of WF6 with Si(100)

Published online by Cambridge University Press:  25 February 2011

G. J. Leusink ,
C. Th. H. Heerkens ,
G. C. A. M. Janssen  and
S. Radelaar
G. J. Leusink
Affiliation:
DIMES, Section Submicron Technology, Delft University of TechnologyP.O. Box 5046, 2600 GA Delft, the Netherlands
C. Th. H. Heerkens
Affiliation:
DIMES, Section Submicron Technology, Delft University of TechnologyP.O. Box 5046, 2600 GA Delft, the Netherlands
G. C. A. M. Janssen
Affiliation:
DIMES, Section Submicron Technology, Delft University of TechnologyP.O. Box 5046, 2600 GA Delft, the Netherlands
S. Radelaar
Affiliation:
DIMES, Section Submicron Technology, Delft University of TechnologyP.O. Box 5046, 2600 GA Delft, the Netherlands
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Abstract

We present measurements on the intrinsic stress developing during chemical vapour deposition of W and WSi2 from the reaction between WF6 and Si (100). It will be shown that depending on temperature and WF6 partial pressure, three growth modes, corresponding with three different stress developments, can be distinguished. The results can be explained with three basic processes. The intrinsic tensile stress during the deposition of self limited W can be as high as 2 GPa.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 211
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Yu, M.L., Eldridge, B.N. and Joshi, R.V., “Tungsten and other Refractory Metals for VLSI Applications IV”, eds. Blewer, R. and McConica, C.M., (MRS, Pittsburgh, PA, 1989), p.221.Google Scholar
[2] Yu, M.L., Eldridge, B.N. and Joshi, R.V., in “Tungsten and other Refractory Metals for VLSI Applications III”, edited by Wells, V.A. (MRS, Pittsburgh, PA, 1988), p.75.Google Scholar
[3] Yarmoff, J.A. and McFeely, F.R., J. Appl. Phys. 63 (11) 5213 (1988).Google Scholar
[4] Kuiper, A.E.T., Willemsen, M.F.C., Schmitz, J.F.J. in the Proceedings of the European Workshop on Refractory Metals and Silicides, Houthalen, Belgium, 1989, eds. de Keersmaecker, R. and Maex, K., p.338.Google Scholar
[5] Wulu, H.C., Gardner, D. and Saraswat, S., in “Tungten and Other Refractory metals for Applications IV”, Blewer, R.S. and McConica, C.M. eds., (MRS, Pittsgurgh, PA., 1988), p. 111.Google Scholar
[6] Doerner, M.F. and Nix, W.D., CRC Critical Reviews in Solid State and Materials Sciences, 14 (3) 225 (1988).Google Scholar
[7] Kleijn, C.R., van der Meer, Th. H. and Hoogendoorn, C.J., J. Electrochem. Soc., 136, 11, 3423 (1989).Google Scholar
[8] Townsend, P. H., Barnett, D.M. and Brunner, T.A., J. Appl. Phys. 62, 4438 (1987).Google Scholar
[9] Berlec, Ivan, J. Appl. Phys. 33, 1 (1962) 197.Google Scholar