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Incorporating Azo-group-functionalized Molecular-Junctions between Metal Nanoelectrodes to produce High-Rectification-Memory Nanodevices

Published online by Cambridge University Press:  01 February 2011

Kabeer Jasuja  and
Vikas Berry
Kabeer Jasuja
Affiliation:
kabeer@ksu.edu, Kansas State University, Chemical Engineering, Manhattan, KS, 66506, United States
Vikas Berry
Affiliation:
vberry@ksu.edu, Kansas State University, Chemical Engineering, 1011 Durland Hall, Kansas State University,, Chemical Engineering, Manhattan, KS, 66506, United States, 7855325519, 7855327372
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Abstract

This report presents the functioning of a molecular memory device with azo-group-functionalized molecular-junctions between metal nanoelectrodes. These junctions are fabricated by a novel electrostatic-assembly process to incorporate azo-group containing polyelectrolyte (AP) between oppositely charged gold nanoparticles (GNP), functioning as nanoelectrodes. The device exhibits a bistable electronic memory effect induced by charge-transfer between AP and GNP, which can be controlled by photo-excitation of the AP. The ON and OFF memory states were found to have a rectification in the range of ∼5000 – 10000. This study will open avenues for development of next-generation molecular systems and devices to produce novel optoelectronic properties.

Keywords

memorynanoscaleelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1096: Symposium FF – Molecular Motors, Nanomachines and Active Nanostructures , 2008 , 1096-FF03-01
Copyright
Copyright © Materials Research Society 2008

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