Hostname: page-component-cb9f654ff-65tv2 Total loading time: 0 Render date: 2025-08-31T08:56:50.701Z Has data issue: false hasContentIssue false
  • English
  • Français

Indentation Load Relaxation Experiments on Al-Si Metallizations

Published online by Cambridge University Press:  16 February 2011

W. R. LaFontaine ,
B. Yost ,
R. D. Black  and
Che-Yu Li
W. R. LaFontaine
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
B. Yost
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
R. D. Black
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
Che-Yu Li
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
Get access

Abstract

Indentation load relaxation (ILR) experiments with indentation depths in the submicron range are described. The observed flow behavior of a 1μm thick A1-2%Si film deposited on a silicon substrate depended on the depth of penetration. For shallow penetration depths, the shape of the flow curves obtained from this sample are similar to those obtained from a conventional load relaxation test of a bulk specimen. For penetration depths close to the film/substrate interface, the influence of the substrate on the film's deformation behavior was observed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 188: Symposium K – Thin Films: Stresses and Mechanical Properties II , 1990 , 165
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Doerner, M. F. and Nix, W. D., J. Mater. Res., 1986, vol.1, pp. 601–09.Google Scholar
[2] Stone, D., LaFontaine, W.R., Wu, T.-W., Alexopoulos, P.S., and Li, Che-Yu, J. Mater. Res. 3 (1), Jan/Feb 1988, pp. 141–147.Google Scholar
[3] Doerner, M.F., Gardner, D.S., and Nix, W.D., J. Mater. Res., 1986, vol.1, pp.845–51.Google Scholar
[4] Flinn, P.A., Gardner, D.S., and Nix, W.D., IEEE Trans. On Electron Devices, 1987, vol. ED-34, pp. 689–99.Google Scholar
[5] Korhonen, M.A. and Paszkiet, C.A., Scripta Metallurgica, vol.23, pp. 1449–1454, 1989 Google Scholar
[6] Hannula, S.-P., Stone, D., and Li, C.-Y., Mater. Res. Symp. Proc., 1985, vol.40, pp. 217–24.Google Scholar
[7] Korhonen, M.A., Hannula, S.-P., and Li, C.-Y., in “Unified Constitutive Equations in Plastic Deformation and Creep of Engineering Alloys”, ed. Miller, A.K., Applied Science Publishers Ltd., Essex, England, (1987), pp. 89–137.Google Scholar
[8] Hart, E.W., J. Engr. Mat. and Tech., 98 (1976) 193–201.Google Scholar
[9] LaFontaine, W.R., Yost, B., Black, R.D. and Li, Che-Yu, Submitted for publication, Journal of Materials Research, 1990.Google Scholar