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The Influence of Interfaces on the Gap State Distribution of Undoped a-Si:H

Published online by Cambridge University Press:  25 February 2011

G. Schumm  and
G. H. Bauer
G. Schumm
Affiliation:
Universität Stuttgart, Inst. Physikalische Elektronik, Pfaffenwaldring 47, D–7000 Stuttgart 80, F.R. Germany.
G. H. Bauer
Affiliation:
Universität Stuttgart, Inst. Physikalische Elektronik, Pfaffenwaldring 47, D–7000 Stuttgart 80, F.R. Germany.
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Abstract

Modulated primary photocurrent (MPC) studies on pin structures show spatial variations of the gap state distribution across the i-layer that can be correlated with Fermi level shifts by band bending towards interfaces. These results as well as reverse bias annealing effects are explained in terms of the defect pool model. It is demonstrated that MPC measurements are basically identical to TOF measurements with clear advantages in the post-transit time regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 189
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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