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Influence of Oxygen Content on the Electronic Properties of the PrAlO3/SrTiO3 Interface

Published online by Cambridge University Press:  10 July 2015

Shirin Mozaffari ,
Mark C. Monti ,
Samaresh Guchhait ,
Jeremy W. Paster ,
Daniel M. Tennant  and
John T. Markert
Shirin Mozaffari
Affiliation:
Physics Department, The University of Texas at Austin, 2515 Speedway, C1600, Austin, TX 78712, U.S.A.
Mark C. Monti
Affiliation:
Physics Department, The University of Texas at Austin, 2515 Speedway, C1600, Austin, TX 78712, U.S.A.
Samaresh Guchhait
Affiliation:
Micoelectronic Research Lab, The University of Texas at Austin, 10100 Burnet Rd, Austin, TX 78758, U.S.A.
Jeremy W. Paster
Affiliation:
Physics Department, The University of Texas at Austin, 2515 Speedway, C1600, Austin, TX 78712, U.S.A.
Daniel M. Tennant
Affiliation:
Physics Department, The University of Texas at Austin, 2515 Speedway, C1600, Austin, TX 78712, U.S.A.
John T. Markert
Affiliation:
Physics Department, The University of Texas at Austin, 2515 Speedway, C1600, Austin, TX 78712, U.S.A.
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Abstract

We have investigated the effect of oxygen pressure during growth (P O2) on the electronic and magnetic properties of PrAlO3 films grown on TiO2-terminated SrTiO3 substrates. The films are smooth, with flat terraces. Resistivity measurements show an increase in the sheet resistance as P O2 is increased from 10–3 to 10–4 torr, with an usual peak as a function of temperature for the sample grown in higher oxygen pressure. We measured a moderate positive magnetoresistance (MR) at low magnetic fields that evolves into a larger negative MR at high fields, for both P O2 samples. Hall effect data exhibit a complex temperature dependence that suggests a compensated carrier density. We observe behavior consistent with two different types of carriers at each of the two different interfaces.

Keywords

oxideelectrical propertiesmagnetoresistance (magnetic)

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References

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