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The Influence of Point Defects on Diffusion and Gettering in Silicon

Published online by Cambridge University Press:  21 February 2011

U. Gösele
Affiliation:
Siemens Research Laboratories, 8000 München 83, Fed. Rep. Germany
T. Y. Tan
Affiliation:
IBM Th. J. Watson Research Center, Yorktown Heights, N.Y. 10598, USA
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Abstract

In a first part, we deal with the influence of intrinsic point defects (vacancies and self-interstitials) on self- and impurity diffusion in silicon. Estimates of the diffusivities and thermal equilibrium concentrations of vacancies and self-interstitials are given. In a second partwe discuss the influence of point defects on the diffusion and precipitation of different types of metallic impurities in various gettering schemes as well as on the nucleation and growth of SiO2 precipitates.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. For references see: Fair, R.B., in Impurity Doping Processes in Silicon, Wang, F.F.Y. ed. (North-Holland, New York, 1981) p. 315.10.1016/B978-0-444-86095-8.50012-4CrossRefGoogle Scholar
2. Gösele, U., Frank, W., and Seeger, A., Inst. Phys. Conf. Series 46, 500 (1979).Google Scholar
3. Gösele, U. and Tan, T.Y., in Defects in Semiconductors II, Corbett, J.W. and Mahajan, S. eds. (North-Holland, New York, 1983) p. 45.Google Scholar
4. Stolwijk, N.A., Schuster, B., and Hölzl, J., Appl. Phys. A 33, 133 (1984).10.1007/BF00617619CrossRefGoogle Scholar
5. Morehead, F., Stolwijk, N.A., Meyberg, W. and Gösele, U., Appl. Phys. Lett. 42, 690 (1983).10.1063/1.94074CrossRefGoogle Scholar
6. Kitagawa, H., Hashimoto, K., and Yoshida, M., Physica 116B, 323 (1983).Google Scholar
7. Yoshida, M. and Saito, K., Jap. J. Appl. Phys. 6, 5737(1967).Google Scholar
8. Wilcox, W.R., Chapelle, T.J. La, and Forbes, D.H., J. Electrochem. Soc. 111, 1377 (1964).10.1149/1.2426008CrossRefGoogle Scholar
9. Mizuo, S. and Higuchi, H., J. Electrochem. Soc. 130, 194 (1983).10.1149/1.2120127CrossRefGoogle Scholar
10. Tan, T.Y. and Gösele, U., Appl. Phys. A, in press.Google Scholar
11. Taniguchi, K., Antoniadis, D.A., and Matsushita, Y., Appl. Phys. Lett. 42, 961 (1983).10.1063/1.93814CrossRefGoogle Scholar
12. Bronner, G.B. and Plummer, J.D., Stanford Report TRDXG501–84, 1984.Google Scholar
13. Hu, S.M., J. Appl. Phys. 45, 1567 (1974).10.1063/1.1663459CrossRefGoogle Scholar
14. Antoniadis, D.A., J. Electrochem. Soc. 129, 1093 (1982).10.1149/1.2124034CrossRefGoogle Scholar
15. Sirtl, E., in Semiconductor Silicon 1977, Huff, H.R. and Sirtl, E. eds. (The Electrochem. Soc., Princeton, 1977) p. 4.Google Scholar
16. For a critique, see: Hu, S.M., J. Appl. Phys., in press.Google Scholar
17. Tan, T.Y. and Gösele, U., Appl. Phys. Lett. 40, 616 (1982).10.1063/1.93200CrossRefGoogle Scholar
18. For references, see: Frank, W., Gbsele, U., Seeger, A., and Mehrer, H., in Diffusion in Crystalline Solids, Murch, G.E. and Nowick, A.S. eds. (Academic Press, New York, 1964) p. 63.Google Scholar
19. Mathiot, D. and Pfister, J.C., J. Electronic Materials, in press.Google Scholar
20. Guerrero, E., Ph. D. Thesis, University of Vienna, 1984.Google Scholar
21. Matsumoto, S., Ishikawa, Y., Nimi, T., J. Appl. Phys. 54, 5049 (1983).10.1063/1.332776CrossRefGoogle Scholar
22. Antoniadis, D.A. and Moskowitz, I., J. Appl. Phys. 53,6788 (1982).10.1063/1.330067CrossRefGoogle Scholar
23. Antoniadis, D.A. and Moskowitz, I., J. Appl. Phys. 53, 9214 (1982).10.1063/1.330394CrossRefGoogle Scholar
24. Mizuo, S., Kusaka, T., Shintani, A., Nanba, M., and Higuchi, H., J. Appl. Phys. 54, 3860 (1983).10.1063/1.332611CrossRefGoogle Scholar
25. Fahey, P., Dutton, R.W., and Moslehi, M., Appl. Phys. Lett. 43, 683 (1983).10.1063/1.94445CrossRefGoogle Scholar
26. Taniguchi, K., Kurosawa, K., and Kashiwagi, M., J. Electrochem. Soc. 127, 2243 (1980).10.1149/1.2129384CrossRefGoogle Scholar
27. Claeys, C.L., Dectlerck, G.J., and van Overstraeten, R.J., in Semiconductor Characterization Techiques, Barnes, P.A. and Rozgonyi, G.A. eds. (the Electrochem. Soc., Princeton, 1978) P.366.Google Scholar
28. Strunk, H., Gösele, U., and Kolbesen, B.O., Appl. Phys. Lett. 34, 530 (1979).10.1063/1.90853CrossRefGoogle Scholar
29. Harris, R. M and Antoniadis, D.A., Appl. Phys. Lett. 43, 937 (1983).10.1063/1.94187CrossRefGoogle Scholar
30. Fahey, P., Dutton, R.W. and Hu, S.M., Appl. Phys. Lett. 44, 777 (1984).10.1063/1.94915CrossRefGoogle Scholar
31. Jaccodine, R.J., in ref. 3, p. 101.Google Scholar
32. Gösele, U. and Strunk, H., Appl. Phys. 20, 265 (1979).10.1007/BF00894994CrossRefGoogle Scholar
33. Schaake, H.F., J. Appl. Phys. 55, 1208(1984).10.1063/1.333163CrossRefGoogle Scholar
34. Ourmazd, A. and Schröter, W., Appl. Phys. Lett. 45, 781 (1984).10.1063/1.95364CrossRefGoogle Scholar
35. Fair, R.B. and Tsai, J.C.C., J. Electrochem. Soc. 124, 1107 (1977).10.1149/1.2133492CrossRefGoogle Scholar
36. Gösele, U. and Tan, T.Y., in Aggregation Phenomena of Point Defects in Silicon, Sirtl, E. ed. (The Electrochem. Soc., Renningtong 1983).p. 17.Google Scholar
37. Watkins, G.D. and Brower, K.L., Phys. Rev. Lett. 36, 1329 (1976).10.1103/PhysRevLett.36.1329CrossRefGoogle Scholar
38. Ladd, L.A., Kalejs, J.P. and Gösele, U., Appl. Phys. Lett. 45, 265 (1984).Google Scholar
39. Ladd, L.A., Kalejs, J.P. and Gösele, U., these proceedings.Google Scholar
40. Stavola, M., Patel, J.R., Kimmerling, L.C., and Freeland, P.E., Appl. Phys. Lett. 42, 73 (1983).10.1063/1.93731CrossRefGoogle Scholar
41. Oates, A.S., Binns, M.J., Newman, R.C., Tucker, J.H., Wilkes, J.G., and Wilkinson, A., J. Phys. C. (1984), in press.Google Scholar
42. Heck, D., Tressler, R.E., and Monkowski, J., J. Appl. Phys. 54, 5739 (1983).10.1063/1.331796CrossRefGoogle Scholar
43. Frank, F.C. and Turnbull, D., Phys. Rev. 104, 617 (1956).10.1103/PhysRev.104.617CrossRefGoogle Scholar
44. Gösele, U., Morehead, F., Frank, W., and Seeger, A., Appl. Phys. Lett. 38, 157 (1981).10.1063/1.92285CrossRefGoogle Scholar
45. Mantovani, S., Nava, F., Nobili, C., Conti, M., and Pignatel, G., Appl. Phys. Lett. 44, 328 (1984).10.1063/1.94742CrossRefGoogle Scholar
46. Prabhaker, A., McGill, T.C., and Nicolet, M.A, Appl. Phys. Lett. 43, 1118 (1983).10.1063/1.94247CrossRefGoogle Scholar
47. Kolbesen, B.O., and Strunk, H., in VLSI Electronics, Microstructure Science Vol,12, Einspruch, N.G. and Haff, H.R. eds. (Academic Press, New York, 1985).Google Scholar
48. Tan, T.Y., Gardner, E.E., and Tice, W.K., Appl. Phys. Lett. 30, 175 (1977).10.1063/1.89340CrossRefGoogle Scholar
49. For data, see: Nicolet, M.-A. and Lau, S.S., in VLSI Electronics, Microstructure Science, Vol.6, Einspruch, N.G. and Lanabee, G.B. eds. (Academic Press, New York, 1963). p. 330.Google Scholar
50. Rohatgi, A., Davis, J.R., Hopkins, R.H., and McMullin, P.G., Solid-State Electronics 26, 1039 (1983).10.1016/0038-1101(83)90001-1CrossRefGoogle Scholar
51. Lecrosnier, D., Paugam, J., Pelous, G., Richou, F., and Salvi, M., J. Appl. Phys. 52, 5090 (1981).10.1063/1.329407CrossRefGoogle Scholar
52. Falster, R.B., Appl. Phys. Lett., in press.Google Scholar
53. Falster, R.B., Ph. D. Thesis, Stanford University, 1983.Google Scholar
54. GOsele, U. and Tan, T.Y., Appl. Phys. A 28, 79 (1982).10.1007/BF00617135CrossRefGoogle Scholar
55. Kung, C.Y., in Defects in Silicon, Bullis, W.M., and Kimerling, L.C. eds. (The Electrochem. Soc., Pennington, 1983).Google Scholar
56. Ogino, M., Appl. Phys. Lett. 41, 847 (1982).10.1063/1.93715CrossRefGoogle Scholar
57. Bender, H., Claeys, C., Van Landuyt, J., Declerck, G., Amelinckx, S., and Van Overstraeten, R., J. Electronic Materials, in press.Google Scholar
58. Hartzell, R.A. et. al., these proceedings.Google Scholar
59. Fair, R.B., in Applied Solid State Science, Suppl. 2, Silicon Integrated Circuits, Part Kahng, B, D. ed. (Academic Press, New York, 1981 p. 1.Google Scholar
60. Lee, S.-T., to be published.Google Scholar