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Influence of SiOx Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells

Published online by Cambridge University Press:  10 February 2011

P.N.K. Deenapanray ,
H.H. Tan  and
C. Jagadish
P.N.K. Deenapanray
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, A.C.T. 0200, Australia pnk1O9@rsphysse.anu.edu.au
H.H. Tan
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, A.C.T. 0200, Australia pnk1O9@rsphysse.anu.edu.au
C. Jagadish
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, A.C.T. 0200, Australia pnk1O9@rsphysse.anu.edu.au
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Abstract

We have investigated the influence of SiOx capping layer quality on impurity-free vacancy interdiffusion in GaAs/Al0.54Ga0.46As quantum wells. Dielectric layers were deposited by plasmaenhanced chemical vapor deposition, and properties of layers were changed by varying either the flow rate of silane or deposition temperature. The extent of intermixing in our samples is discussed in terms of the 0 content and incorporation of N in capping layers, and also on their porosity. We also report on the electrically active defects which are introduced in Si02 capped and annealed n-GaAs, and relate them to the intermixing process.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 491
Copyright
Copyright © Materials Research Society 2000

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