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Influence of the Fermi Energy on Si–H Vibrational Modes in Amorphous and Microcrystalline Silicon

Published online by Cambridge University Press:  17 March 2011

N. H. Nickel  and
P. Lengsfeld
N. H. Nickel
Affiliation:
Hahn-Meitner-Institut Berlin, Kekuléstr. 5, D-12489 Berlin, Germany
P. Lengsfeld
Affiliation:
Hahn-Meitner-Institut Berlin, Kekuléstr. 5, D-12489 Berlin, Germany
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Abstract

The influence of boron and phosphorous doping and the effect of structural changes on hydrogen bonding in a-Si:H and µc-Si are investigated using Raman spectroscopy. Information on H bonding is obtained from Si-H stretching local vibrational modes (LVM's). In n-type and undoped a-Si:H the LVM's of isolated Si-H near 2000 cm−1 and clustered Si-H around 2100 cm−1 can be clearly distinguished. In heavily B doped a-Si:H, however, the LVM at 2100 cm−1 disappears. A structural change from a-Si:H to µc-Si gives rise to an additional mode centered at 1911 cm−1. Similar LVM's are observed in poly-Si containing platelets.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A20.3
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1 Nickel, N. H., Jackson, W. B., and Johnson, N. M., Phys. Rev. Lett. 71, 2733 (1993).Google Scholar
2 Beyer, W., in Hydrogen in Semiconductors II, 61, Editor Nickel, N. H., Academic Press (San Diego 1999) p. 165.Google Scholar
3 Branz, H. M., Asher, S. E., and Nelson, B. P., Phys. Rev. B 47, 7061 (1993).Google Scholar
4 Mahan, A. H., Raboisson, P., Williamson, D. L., and Tsu, R., Solar Cells, 21, 117 (1987).Google Scholar
5 Johnson, N. M., Herring, C., Doland, C., Walker, J., Anderson, G. B., and Ponce, F., Mat. Science Forum Vol. 83–87, 33 (1992).Google Scholar
6 Stein, H. J., J. Electron. Mater. 4, 159 (1975).Google Scholar
7 Deák, P., Snyder, L. C., Heinrich, M., Ortiz, C. R., and Corbett, J. W., Physica B 170,253 (1991).Google Scholar
8 Brodsky, M. H., Cardona, M., and Cuomo, J. J., Phys. Rev. B 16, 3556 (1977).Google Scholar
9 Wagner, H. and Beyer, W., Solid State Comm. 48, 585 (1983).Google Scholar
10 Manfredotti, C., Fizzotti, F., Boero, M., Pastorino, P., Polesello, P., and Vittone, E., Phys. Rev. B 50, 18047 (1994).Google Scholar
11 Nickel, N. H., Anderson, G. B., Johnson, N. M., and Walker, J., Physica B 273–274, 212 (1999).Google Scholar
12 Nickel, N. H. and Jackson, W. B., Phys. Rev. B 51, 4872 (1995).Google Scholar