Hostname: page-component-848d4c4894-2pzkn Total loading time: 0 Render date: 2024-05-08T10:29:35.571Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of the Ferroelectric Phase Transition on the Photoelectrical Properties of the P-N Junctions

Published online by Cambridge University Press:  15 February 2011

Anatol T. Lupu  and
Svetlana P. Grishechkina
Anatol T. Lupu
Affiliation:
Technical University of Moldova, 168 Stefan eel Mare, Chisinau, MOLDOVA, 277012
Svetlana P. Grishechkina
Affiliation:
Lebedev Physics Institute, Russian Academy of Sciences, 53 Leninsky av, Moscow, RUSSIA, B312
Get access

Abstract

Photoelectrical properties of the p-n junctions on the base of Pb1−xGexTe were investigated. A number of anomalous phenomena below Tc such as: the change of the photovoltage sign, low frequency maximum in the temperature dependence of the junction capacitance and feature near the edge of the spectral dependence were observed.

To explain the obtained results a model considering screening of spontaneous polarization outside the junction was proposed. This work gave for the first time experimental evidence concerning the model of polarization switching in ferroelectric with p-n junction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 215
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Takaoka, S. and Murase, K., Phys. Rev. B, 20, 2223 (1979).Google Scholar
2. Yaraneri, H., Grassie, A.D.C. and Loram, J.W.. Proc. 4th Int. Conf. Phys. Narrow Gap Semiconductors. Linz, edited by Gornik, E., Heinrich, H. and Palmetshofer, L. (Berlin, Springer, 1981) pp. 270–274.Google Scholar
3. Jantsch, W., Proc.4th Tnt. Conf. Phys. Naroow Gap Semiconductors. Linz, edited by Gornik, E., Heinrich, H. and Palmetshofer, L. (Berlin, Springer, 1981) pp. 226–237.Google Scholar
4. Islam, Q.T., Bunker, A.B., Phys. Rev. Lett., 59, 2701 (1987).Google Scholar
5. Lewis, A.V., Nicholas, R.J., Ramage, J.C., Bauer, G., Stradling, R.A., J. Phys. C, 13, 561 (1980).Google Scholar
6. Pavlidou, E., Valassiades, O., phys. stat. sol.(b) 153, k51 (1989).Google Scholar
7. Honke, D.K., Holloway, H., Kaiser, S., J. Phys. Chem. Solids, 33, 2053 (1972).Google Scholar
8. Grishechkina, S.P., Lupu, A.T., Kratkie Soobschenia Fiz. FIAN, (1), 17 (1989).Google Scholar
9. Volkov, B.A., Zhohovets, S.A. and Chokparova, G.A., Fiz. Tekn. Poluprovodn. 12, 850 (1978).Google Scholar
10. Sandomirsky, V.B., Halilov, S.h.H., Chensky, E.V., Ferroelectrics, 45, 107 (1982).Google Scholar
11. Musabekov, T.Iu., PhD thesis, Tashkent Univ., 1970.Google Scholar
12. Halilov, S.h.H.. PhD thesis, Institute of Radiotechnics and electronics of the Soviet Union Academy of Sciences, Moscow, 1982.Google Scholar
13. Zhohovets, S.V., PhD thesis, Lebedev Physics Institute of the Soviet Union Academy of Sconces, Moscow, 1978.Google Scholar
14. Grishechkina, S.P., Lupu, A.T., Kratkie Soobschenia Fiz. FIAN, (8), 22(1988).Google Scholar
15. Lishka, K., phys. stat. sol.(b) 133, 17 (1986).Google Scholar
16. Muller, P., phys. stat. sol.(a) 67, 11 (1981).Google Scholar