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The Influence Of The Incorporation And Desorption Of Chn, Groups On The Defect Structure Of a-SiC:H Films

Published online by Cambridge University Press:  15 February 2011

T. Friessnegg ,
M. Boudreau ,
P. Mascher ,
P.J. Simpson  and
W. Puff
T. Friessnegg
Affiliation:
Institut für Kemphysik, Technische Universittät Graz, A-8010 Graz, Austria
M. Boudreau
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada
P. Mascher
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada
P.J. Simpson
Affiliation:
The Positron Beam Laboratory, Department of Physics, The University of Western Ontario, London, Ontario, Canada
W. Puff
Affiliation:
Institut für Kemphysik, Technische Universittät Graz, A-8010 Graz, Austria
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Abstract

Changes in the defect structure in carbon rich a-SiC:H films deposited on various substrates using ditertiary butyl silane were investigated as a function of thermal treatment. Films grown at high deposition rates exhibit hydrogen trapped in voids. The incorporation of CHn, groups is thought to be the origin for these microvoids. With increasing annealing temperature the effusion of CHn, groups as determined by thermal desorption experiments promotes void growth which was studied using a variable energy positron beam. At annealing temperatures above 600 °C the films densify due to the breaking of C-H bonds and the formation of additional C-C bonds when the voids anneal out.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 667
Copyright
Copyright © Materials Research Society 1997

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