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Influence of the Surface Depletion Layer on the Photoetching Rate at Growth Striations in Lec GaAs.

Published online by Cambridge University Press:  28 February 2011

C. Frigeri ,
J. L. Weyher  and
L. Zanotti
C. Frigeri
Affiliation:
CNR-MASPEC Institute, via Chiavari 18/A, 43100 Parma, Italy
J. L. Weyher
Affiliation:
Catholic University, RIM, Toernooiveld, 6525 ED Nijmegen, The Netherlands
L. Zanotti
Affiliation:
CNR-MASPEC Institute, via Chiavari 18/A, 43100 Parma, Italy
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Abstract

Quantitative energy-dependent EBIC measurements have been used to calibrate the photoetching rate in HF-CrO3 aqueous solutions (DSL method: Diluted Sirtl-like etching with the use of Light) as a function of dopant concentration in LEC grown n-type GaAs samples containing growth striations. The relative DSL etching rate depends on the width of the surface depletion region associated with the semiconductor-etching solution interface, i. e. greater etch rates correspond to smaller dopant concentrations. These results are in agreement with the electrochemical model of GaAs etching in the DSL etching system.

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