Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-29T00:53:15.227Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Ti Sources on Properties of (Ba,Sr)TiO3 Films Prepared by Liquid Source CVD

Published online by Cambridge University Press:  15 February 2011

T. Kawahara ,
M. Yamamuka ,
T. Makita ,
A. Yuuki ,
N. Mikami  and
K. Ono
T. Kawahara
Affiliation:
Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan
M. Yamamuka
Affiliation:
Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan
T. Makita
Affiliation:
Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan
A. Yuuki
Affiliation:
Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan
N. Mikami
Affiliation:
Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan
K. Ono
Affiliation:
Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan
Get access

Abstract

We have investigated influences of Ti sources on properties of (Ba,Sr)TiO3 [BST] films prepared on Pt/SiO2/Si substrates by liquid source chemical vapor deposition (liquid source CVD): TiO(DPM)2 [titanyl bis (dipivaloylmethanato), TiO(C11 H19O2)2], Ti(O-i-Pr)2 (DPM)2 [bis (isopropoxy) bis (dipivaloylmethanato) titanium, Ti(o-i-C3H7)2(C11H19O2)2], and TTIP [titanium tetraisopropoxide, Ti(O-i-C3H7)4]. Improved electrical properties and step coverage were obtained using TiO(DPM)2 at a substrate temperature TS=420'C and a reactor pressure P=1.5Torr as follows: a dielectric constant ε=210, equivalent SiO2 thickness teq=0.51nm, leakage current density JL=6.6×10∼−8A/cm2 at +1.1V, dielectric loss tan δ=0.007, and coverage of 0.8. However, hillocks appeared on the BST film surface under these conditions, while the film surfaces were relatively smooth using TTIP. The density of these hillocks appeared to be related to the BST(110) peak intensity of the X-ray diffraction pattern.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 361
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ohno, Y., Horikawa, T., Shinkawata, H., Kashihara, K., Kuroiwa, T., Okudaira, T., Hashizume, Y., Fukumoto, K., Eimori, T., Shibano, T., Arimoto, K., Itoh, H., Nishimura, T. and Miyoshi, H.: 7994 Symp. on VLSI Tech. Dig. (1994) 149.Google Scholar
2. Kawahara, T., Yamamuka, M., Makita, T., Tsutahara, K., Yuuki, A., Ono, K. and Matsui, Y.: Jpn. J. Appl. Phys. 33 (1994) 5897.Google Scholar
3. Kawahara, T., Yamamuka, M., Makita, T., Naka, J., Yuuki, A., Mikami, N. and Ono, K.: Jpn. J. Appl. Phys. 33 (1994) 5129.Google Scholar
4. Van Buskirk, P.C., Gardiner, R., Kirlin, P.S. and Krupanidhi, S.: Proc. 8th Int. Symp. Applications Ferroelectrics, Greenville, 1992 (IEEE, Piscataway) p. 340.Google Scholar
5. Lesaicherre, P.Y., Yamaguchi, H., Sakuma, T., Miyasaka, Y., Yoshida, M. and Ishitani, A.: Mat. Res. Soc. Symp. Proc. 310 (1993) 487.Google Scholar
6. Kimura, T., Yamauchi, H., Machida, H., Kokubun, H. and Yamada, M.: Jpn. J. Appl. Phys. 33 (1994) 5119.Google Scholar