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Influences of hydrogen passivation on NIR photodetection of n-type β-FeSi2/p-type Si heterojunction photodiodes fabricated by facing-targets direct-current sputtering

Published online by Cambridge University Press:  16 January 2012

Kyohei Yamashita ,
Nathaporn Promros ,
Ryūhei Iwasaki ,
Shota Izumi  and
Tsuyoshi Yoshitake
Kyohei Yamashita
Affiliation:
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Nathaporn Promros
Affiliation:
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Ryūhei Iwasaki
Affiliation:
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Shota Izumi
Affiliation:
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Tsuyoshi Yoshitake
Affiliation:
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Abstract

Hydrogen passivation was applied to the initial epitaxial growth of n-type β-FeSi2 thin films on p-type Si(111) substrates by facing-targets direct-current sputtering (FTDCS) in order to reduced the formation of interface states and terminate dangling bonds in the β-FeSi2 films, and the passivation effects were studied on basis of the electrical evaluation results of the formed n-type β-FeSi2/p-type Si heterojunction photodiodes. The initial growth was made at different gas inflow H2/Ar ratios ranging from 0 to 0.2. The photodetection performance of the photodiode fabricated at the ratio of 0.2 was markedly improved as compared to those of the other samples. The quantum efficiency and detectivity were 2.08 % and 1.75 × 1010 cm√Hz/W, respectively. The sample exhibited the minimum junction capacitance density of 9.2 nF/cm2. The enhanced photodetective performance should be mainly because dangling bonds that act as trap centers for photocarriers are effectively inactivated by the passivation.

Keywords

sputteringhydrogenationelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1396: Symposium O – Compound Semiconductors for Generating, Emitting and Manipulating Energy , 2012 , mrsf11-1396-o07-18
Copyright
Copyright © Materials Research Society 2012

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References

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