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Infrared Cathodoluminescence Studies from Dislocations in Silicon in tem, a Fourier Transform Spectrometer for Cl in Tem and Els/cl Coincidence Measurements of Lifetimes in Semiconductors

Published online by Cambridge University Press:  26 February 2011

R. J. Graham ,
J.C.H. Spence  and
H. Alexander
R. J. Graham
Affiliation:
Department of Physics, Arizona State University, Tempe, Arizona 85287, U.S.A.
J.C.H. Spence
Affiliation:
Department of Physics, Arizona State University, Tempe, Arizona 85287, U.S.A.
H. Alexander
Affiliation:
Physikalischer Institute, Universitat Köln, D-5000 Köln 41, F.R.G.
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Abstract

In this paper we report the first observations by cathodoluminescence in TEM of radiative infrared emission from dislocations in silicon. These results were obtained at 23-25K in a Philips EM400 electron microscope. Our results are interpreted in the light of earlier photoluminescence work, and the prospects for obtaining spectra from a small number of well characterized dislocations with high spatial resolution are reviewed. Preliminary results are also reported showing the infrared band-gap emission spectrum of GaInAs at 90K recorded using a small Fourier Transform Spectrometer fitted to the same electron microscope. Finally, we describe timing coincidence experiments from samples in which only those visible CL photons are counted which arrive at the detector at the same time as the corresponding transmitted electron energy loss event. We describe the use of this technique for life-time mapping in semiconductors.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 235
Copyright
Copyright © Materials Research Society 1987

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References

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