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Initial Growth Stage of AlGaN Grown Directly on (0001) 6H-SiC by MOVPE

Published online by Cambridge University Press:  10 February 2011

K. Horino ,
A. Kuramata  and
T. Tanahashi
K. Horino
Affiliation:
Fujitsu Laboratories Ltd., 10–1 Morinosato-wakamiya, Atsugi 243–01, Japan
A. Kuramata
Affiliation:
Fujitsu Laboratories Ltd., 10–1 Morinosato-wakamiya, Atsugi 243–01, Japan
T. Tanahashi
Affiliation:
Fujitsu Laboratories Ltd., 10–1 Morinosato-wakamiya, Atsugi 243–01, Japan
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Abstract

We investigated the growth process of AlGaN films grown directly on 6H-SiC (0001) substrates by metalorganic vapor phase epitaxy (MOVPE). We focused on the initial growth stage to clarify the mechanism of nitride growth on SiC. From Energy Dispersive X-ray (EDX) analysis we found that an Al-rich region generated naturally at the AlGaN/SiC interface. We also found that Al flux determined the density of grain which generated during the initial growth stage, and this grain density reflected the surface morphology.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 73
Copyright
Copyright © Materials Research Society 1997

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References

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