Article contents
Initial Growth Stage of AlGaN Grown Directly on (0001) 6H-SiC by MOVPE
Published online by Cambridge University Press: 10 February 2011
Abstract
We investigated the growth process of AlGaN films grown directly on 6H-SiC (0001) substrates by metalorganic vapor phase epitaxy (MOVPE). We focused on the initial growth stage to clarify the mechanism of nitride growth on SiC. From Energy Dispersive X-ray (EDX) analysis we found that an Al-rich region generated naturally at the AlGaN/SiC interface. We also found that Al flux determined the density of grain which generated during the initial growth stage, and this grain density reflected the surface morphology.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1997
References
REFERENCES
- 4
- Cited by