Hostname: page-component-54dcc4c588-42vt5 Total loading time: 0 Render date: 2025-09-12T03:34:48.798Z Has data issue: false hasContentIssue false
  • English
  • Français

Initial Phase Formation and Distribution in the Pt-GexSi1−x and Cr-GexSi1−x Systems

Published online by Cambridge University Press:  25 February 2011

Q. Z. Hong  and
J. W. Mayer
Q. Z. Hong
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Get access

Abstract

Metal-GeSi reactions have been investigated in the Pt-GeSi and Cr-GeSi systems. Pt started to diffuse into and react with the alloys at 250 °C. The reacted region consisted of a uniform mixture of Pt2Si and Pt2Ge, with the same ratios of Ge to Si as those in the unreacted region. On the other hand, the Cr-GeSi reaction was induced by Ge motion at 375 °C. As a result a two-layer phase separation was observed. A Si-rich ternary layer was sandwiched between a germanide layer and the unreacted alloy

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 145
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Bean, J. C., Feldman, L. C., Fiory, A. T., Nakahara, S., and Robinson, I. K., J. Vac. Sci. Technol. A2, 436 (1984).CrossRefGoogle Scholar
2. Nicolet, M.-A. and Lau, S. S., in VLSI Electronics, Microstructure Science, edited by Enspruch, N. G. and Larrabee, G. B. ( Academic, New York, 1983 ), Vol. 6, p. 330.Google Scholar
3. Marshall, E. D., Wu, C. S., Pai, C. S., Scott, D. M., and Lau, S. S., Mater. Res. Soc. Symp. Proc. 47, 161 (1985).CrossRefGoogle Scholar
4. Thompson, R. D., Tu, K. N., Angillelo, J., Delage, S., and Iyer, S. S., J. Electrochem. Soc. 135, 3161 (1988).CrossRefGoogle Scholar
5. Hong, Q. Z. and Mayer, J. W., J. Appl. Phys. 66, 611 (1989).CrossRefGoogle Scholar
6. Thomas, O., Delage, S., D’Heurle, F. M., and Scilla, G., Appl. Phys. Lett. 54, 228 (1989).CrossRefGoogle Scholar
7. Rykova, M. A., Sabirzyanov, A. V., Zagryazhskii, V. L., and Gel’d, P. V., Inorg. Mat. 7, 835 (1971).Google Scholar