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Initial Phase Formation and Distribution in the Pt-GexSi1−x and Cr-GexSi1−x Systems

Published online by Cambridge University Press:  25 February 2011

Q. Z. Hong  and
J. W. Mayer
Q. Z. Hong
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
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Abstract

Metal-GeSi reactions have been investigated in the Pt-GeSi and Cr-GeSi systems. Pt started to diffuse into and react with the alloys at 250 °C. The reacted region consisted of a uniform mixture of Pt2Si and Pt2Ge, with the same ratios of Ge to Si as those in the unreacted region. On the other hand, the Cr-GeSi reaction was induced by Ge motion at 375 °C. As a result a two-layer phase separation was observed. A Si-rich ternary layer was sandwiched between a germanide layer and the unreacted alloy

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 145
Copyright
Copyright © Materials Research Society 1990

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References

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