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Initial Stages of Epitaxial Growth of GaAs on (100) Silicon

Published online by Cambridge University Press:  25 February 2011

D. K. Biegelsen ,
F. A. Ponce ,
A. J. Smith  and
J. C. Tramontana
D. K. Biegelsen
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
F. A. Ponce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
A. J. Smith
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
J. C. Tramontana
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

Direct observations of early stages of growth of GaAs on (100)Si are presented. Cross sectional TEM and plan view SEM images show three dimensional island growth, for growth above 300°C. Island size, island spacing, surface morphology and stacking fault defect spacing all decrease with substrate temperaturefor fixed Ga and As2 fluxes. Below 300C, 7nm thick films are uniform. Diffusion-controlled growth kinetics are inferred.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 45
Copyright
Copyright © Materials Research Society 1986

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