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Insight into Distribution and Switching of ReRAM Filaments Based on Variation Analysis of Memory Characteristics

Published online by Cambridge University Press:  16 February 2012

Kentaro Kinoshita ,
Hayato Tanaka ,
Masataka Yoshihara  and
Satoru Kishida
Kentaro Kinoshita
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan. Tottori University Electronic Display Research Center, 522-2 Koyama-Kita, Tottori 680-0941, Japan.
Hayato Tanaka
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
Masataka Yoshihara
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
Satoru Kishida
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan. Tottori University Electronic Display Research Center, 522-2 Koyama-Kita, Tottori 680-0941, Japan.
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Abstract

A hypothesis that probability giving Δ(1/Vset) [= 1/Vset(n) - 1/Vset(n+1)] > 0, P[Δ(1/Vset) > 0], increases with increasing the number of filaments contained in one memory cell, Nfila, and decreases with increasing switching cycle, n, was made to validate a multi-filament model (MFM) as a mechanism causing the cycle to cycle dispersion of Vset in ReRAM. Here, Δ(1/Vset) is the difference between the inverse of set voltages after n-th and (n+1)-th reset processes. This in turn means that Vset will decrease with increasing Nfila and will increase with increasing n. In addition, another hypothesis that probability giving Δ(1/R) [= 1/Rn - 1/Rn+1] > 0, P[Δ(1/R) > 0], agrees with P[Δ(1/Vset) > 0] was made by incorporating the assumption that vset depends on d with the MFM. Here, Rn, vset, and d represent resistance in high resistance state after the n-th reset process, the set voltage of each filament, and the thickness of a gap between the electrode and the edge of the filament. The validity of these two hypotheses were confirmed by measuring the dependence of P[Δ(1/Vset) > 0], P[Δ(1/R) > 0], and the mean value of Vset, <Vset>, on both the length of the perimeter, L, and n of Pt/NiO/Pt structures to which filaments were introduced by etching the NiO layer.

Keywords

memoryelectrical propertiesNi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1406: Symposium Z – Functional Metal-Oxide Nanostructures , 2012 , mrsf11-1406-z18-61
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Kim, D. C., Seo, S., Ahn, S. E., Suh, D.-S., Lee, M. J., Park, B.-H., and Yoo, I. K., Appl. Phys. Lett. 88, 202102 (2006).Google Scholar
2. Lee, H. Y., Chen, Y. S., Chen, P. S., Gu, P. Y., Hsu, Y. Y., Wang, S. M., Liu, W. H., Tsai, C. H., Sheu, S. S., Chiang, P. C., Lin, W. P., Lin, C. H., Chen, W. S., Chen, F. T., Lien, C. H., and Tsai, M.-J., Proceedings of the 2004 IEEE International Electron Devices Meeting , (IEEE, Washington, DC, 2010), pp. 460–463.Google Scholar
3. Ahn, S.-E., Lee, M.-J., Park, Y., Kang, B. S., Lee, C. B., Kim, K. H., Seo, S., Suh, D.-S., Kim, D.-C., Hur, J., Xianyu, W., Stefanovich, G., Yin, H., Yoo, I.-K., Lee, J.-H., Park, J.-B., Baek, I.-G., and Park, B. H., Adv. Mater. 20, 924 (2008).Google Scholar
4. Lee, S. B., Chae, S. C., Chang, S. H., Lee, J. S., Seo, S., Kahng, B., and Noh, T. W., Appl. Phys. Lett. 93, 212105 (2008).Google Scholar
5. Yoda, T., Kinoshia, K., Makino, T., Dobashi, K., and Kishida, S., Phys. Status Solidi C 8, 546 (2011).Google Scholar
6. Greene, P.D., Bush, E.L., and Rawlings, I.R.: Thin film dielectrics. Proc. Symp. on Deposited Thin Film Dielectric Materials, Montreal, Canada , edited by Vratny, F. (The Electrochemical Society, New York, 1969), pp. 167–185.Google Scholar
7. Kinoshita, K., Tamura, T., Aoki, M., Sugiyama, Y., and Tanaka, H., Appl. Phys. Lett. 89, 103509 (2006).Google Scholar
8. Gao, B., Zhang, H. W., Yu, S., Sun, B., Liu, L. F., Liu, X. Y., Wang, Y., Han, R. Q., Kang, J. F., Yu, B., and Wang, Y. Y., Symposium on VLSI Technology Digest of Technical Papers ., (IEEE, Honolulu, HI, 2009 ), pp. 30–31.Google Scholar
9. Hashimoto, S., Hirokawa, K., Fukuda, Y., Suzuki, K., Suzuki, T., Usuki, N., Gennai, N., Yoshida, S., Koda, M., Sezaki, H., Horie, H., Tanaka, A., and Ohtsubo, T., Surf. Interface Anal. 18, 799 (1992).Google Scholar
10. Kim, K.S. and Winograd, N., Surf. Sci. 43, 625 (1974).Google Scholar
11. Tanaka, H., Kinoshita, K., Yoshihara, M., and Kishida, S., (Mater. Res. Soc. Symp. Proc., Boston, MA, 2010) to be published.Google Scholar