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In-Situ Growth of C-Axis Oriented YBa2Cu3O7−x on Silicon with Composite Buffer Layers by Plasma Enhanced Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  26 February 2011

Jiming Zhang ,
Robin Gardiner  and
Peter S. Kirlin
Jiming Zhang
Affiliation:
Advanced Technology Materials Inc., Danbury, CT 06810
Robin Gardiner
Affiliation:
Advanced Technology Materials Inc., Danbury, CT 06810
Peter S. Kirlin
Affiliation:
Advanced Technology Materials Inc., Danbury, CT 06810
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Abstract

YBa2Cu3O7−x thin films have been grown in-situ on Si (100) with a composite buffer layer of Pt/Ta/ONO (ONO stands for a S1O2 / Si3N4 /SiO2 trilayer) by plasma enhanced metal organic chemical vapor deposition (PE-MOCVD). X-ray diffraction measurements indicate that c-axis oriented YBa2Cu3O7−x films are formed in-situ at substrate temperatures as low as 650 °C on Pt/Ta/ONO/Si. The composite P/Ta/ONO provided an adherent metallic interlayer and effectively prevented the interaction between YBa2Cu3O7−x and Si. Four probe resistivity measurements indicate the onset of superconductivity at 92 K and achieved zero resistance at 65 K.

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