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In-Situ Regrowthi of GaAs Through Controlled Phase Transformations and Reactions of Thin Films on GaAs

Published online by Cambridge University Press:  10 February 2011

D. A. Caldwell ,
L.-C. Chen ,
A. H. Bensaoula ,
J. K. Farrer ,
C. B. Carter  and
C. J. Palmstrøm
D. A. Caldwell
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
L.-C. Chen
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
A. H. Bensaoula
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
J. K. Farrer
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
C. B. Carter
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
C. J. Palmstrøm
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
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Abstract

In-situ depositions and reactions are utilized in the study of phase formation from solid phase reactions. We report on the formation of epitaxial GaAs and the formation of NiAs or Ni2Ga3 by the exposure of Ni3GaAs to As4 or Ga fluxes. In-situ annealing of Ni on MBE-grown GaAs leads to Ni3GaAs, and subsequent reaction with As4 or Ga drives regrowth of GaAs. The structures were analyzed by RBS, XRD, TEM, and in-situ electrical measurements.

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References

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