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In-Situ Strain Measurement Via X-Ray Diffraction

Published online by Cambridge University Press:  21 February 2011

R. D. Thompson
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598
J. Angilello.
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

A high speed x-ray diffraction system has been built around a Curved Position Sensitive Detector. This system has a hot/cold stage in a modified vacuum chamber to allow for control of the ambient gas mix while in-situ x-ray diffraction spectra are acquired. We have used this system to measure the strain in Al/Cr/SiO2 structures after abrupt changes in temperature. The good adhesion afforded by the Cr layer combined with the large difference in the thermal expansion coefficients of the Al (≃25×10−6/°K) and the quartz (≃0.5×10−6/°K) components make this an ideal sample for demonstrating the capabilities of this system. In-situ resistivity measurement provides an independent indication of the changes in the sample.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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