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Insulating and Breakdown Characteristics of Low Temperature GaAs

Published online by Cambridge University Press:  15 February 2011

H. L. Grubin ,
J. P. Kreskovsky  and
R. Levy
H. L. Grubin
Affiliation:
Scientific Research Associates, Inc. Glastonbury, Connecticut 06033
J. P. Kreskovsky
Affiliation:
Scientific Research Associates, Inc. Glastonbury, Connecticut 06033
R. Levy
Affiliation:
Scientific Research Associates, Inc. Glastonbury, Connecticut 06033
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Abstract

The electrical characteristics of an N(LT)N structure are studied through implementation of numerical simulation techniques for the case of donor traps 0.83 ev below the conduction band and acceptor traps 0.3 ev above the valence band. The results show characteristics sensitive to the relative densities of the traps. In particular, high acceptor trap / low donor trap concentrations generally result in low breakdown voltages, whereas high acceptor / high donor concentrations result in higher breakdown voltages.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 39
Copyright
Copyright © Materials Research Society 1992

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References

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