Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-24T11:56:23.045Z Has data issue: false hasContentIssue false
  • English
  • Français

Integration of Multi-Level Copper Metallization into a High Performance Sub-0.25μM Technology

Published online by Cambridge University Press:  10 February 2011

R. Venkatraman ,
A. Jain ,
J. Farkas ,
J. Mendonca ,
G. Hamilton ,
C. Capasso ,
D. Denning ,
C. Simpson ,
B. Rogers  and
L. Frisa
...Show all authors
R. Venkatraman
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
A. Jain
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
J. Farkas
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
J. Mendonca
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
G. Hamilton
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
C. Capasso
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
D. Denning
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
C. Simpson
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
B. Rogers
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
L. Frisa
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
T. P. Ong
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
M. Herrick
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
V. Kaushik
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
R. Gregory
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
E. Apen
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
M. Angyal
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
S. Filipiak
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
P. Crabtree
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
T. Sparks
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
S. Anderson
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
D. Coronell
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
R. Islam
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
B. Smith
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
R. Fiordalice
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
H. Kawasaki
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
J. Klein
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
S. Venkatesan
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
E. Weitzman
Affiliation:
Motorola Inc., 3501 Ed Bluestein Blvd., Austin TX 78721
Get access

Abstract

We report the integration of six levels of Cu interconnects using dual inlaid patterning in a 0.2 μm logic technology. A review of process technology as well as device performance shortcomings using conventional aluminum metallization has been presented. Two tantalum based barriers, TaNx and Ta-Si-N as well as a titanium based barrier, CVD TiN, have been evaluated for their applicability. The use of embedded barriers wherein the barrier is formed below the surface of the dielectric has also been discussed as a potential option. No degradation to the device front-end parametrics were found with the choice of an appropriate barrier. Planarization by Cu CMP introduces surface topography that needs to be minimized in order to process multiple levels of interconnects within specified sheet resistance distributions for a range of line widths. Excellent results with highly planarized levels of metallization have consistently been achieved through an optimization of the unit processes and device integration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 41
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Jain, A. et al. in Advanced Metallization and Interconnect Systems for ULSI Applications in 1997, edited by Cheung, R., Klein, J., Tsubouchi, K., Murakami, M. and Kobayashi, N. (Materials Research Society, Warrendale, PA, 1998), pp.41–47.Google Scholar
2) Venkatesan, S. et al., IEDM Technical Digest (IEEE, Piscataway, NJ, 1997) pp.769–772.Google Scholar
3) Thornton, J.A., Tabock, J. and Hoffman, D.W., Thin Solid Films 64, 111 (1979).Google Scholar
3) Mendonca, J. et al. in Advanced Metallization and Interconnect Systems for ULSI Applications in 1997, edited by Cheung, R., Klein, J., Tsubouchi, K., Murakami, M. and Kobayashi, N. (Materials Research Society, Warrendale, PA 1998) pp.741–7 45.Google Scholar
5) Farkas, J. et al. in Advanced Metaflization and Interconnect Systems for ULSI Applications in 1997, edited by Cheung, R., Klein, J., Tsubouchi, K., Murakami, M. and Kobayashi, N. (Materials Research Society, Warrendale, PA 1998) pp.523–533.Google Scholar