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Interaction Between Co and SiO2 During Ion-Beam Mixing and Rapid Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

C. Dehm ,
I. Kasko ,
E. P. Burte  and
H. Ryssel
C. Dehm
Affiliation:
Fraunhofer-Arbeitsgrappe für Integrierte Schaltungen, Artilleriestrasse 12, D-8520 Erlangen, Federal Republic of Germany
I. Kasko
Affiliation:
Fraunhofer-Arbeitsgrappe für Integrierte Schaltungen, Artilleriestrasse 12, D-8520 Erlangen, Federal Republic of Germany
E. P. Burte
Affiliation:
Fraunhofer-Arbeitsgrappe für Integrierte Schaltungen, Artilleriestrasse 12, D-8520 Erlangen, Federal Republic of Germany
H. Ryssel
Affiliation:
Fraunhofer-Arbeitsgrappe für Integrierte Schaltungen, Artilleriestrasse 12, D-8520 Erlangen, Federal Republic of Germany also: Lehrstuhl für Elektronische Bauelemente, Cauerstrasse 6, D-8520 Erlangen, Federal Republic of Germany
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Abstract

For the application in self-aligned processes, it was supposed that CoSi2 could be superior to TiSi2, since, unlike Ti, a reaction between Co and SiO2 was not observed up to now. We studied the reaction of Co and SiO2 during ion-beam mixing and rapid thermal annealing (RTA). The influences of As and Ge implantation energy and dose were investigated in the range of 50 to 200 keV and 1–1014 to 5–1015 cm2. The annealing temperature was varied between 700° C and 1100°C.

It could be demonstrated that the Co concentration in SiO2 rises with increasing Ge and As energy and dose up to values of 5·1015 cm2 compared to 2·1012 cm2 in unim-planted, annealed samples. The Co profiles in SiO2 were also studied by secondary ion mass spectroscopy (SIMS) and compared with Monte-Carlo simulations indicating pure ballistic mixing. Plan-view and cross-section transmission electron microscopy (TEM) were used to examine the SiO2 surface as well as the Co-SiO2 interface. These investigations revealed that ion-beam mixing with doses at or above 5·1014 cm2 and subsequent annealing does not damage the SiO2 unlike to unimplanted, annealed samples which show a rather severe structural change of the SiO2 surface increasing with rising annealing temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 917
Copyright
Copyright © Materials Research Society 1992

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References

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