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Interaction of Copper With Single Crystal Sapphire

Published online by Cambridge University Press:  28 February 2011

A. G. Schrott ,
R. D. Thompson  and
K. N. Tu
A. G. Schrott
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
R. D. Thompson
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
K. N. Tu
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
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Abstract

The effect of small coverages of Cu evaporated in ultra-high vacuum (UHV) on A12O3 (0001) surfaces has been investigated by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). These surfaces were cleaned either by annealing at 1000°C in O2 or by Ar sputtering. They differ both in their initial state and their interaction with Cu. The XPS spectra from as-deposited Cu on sputtered samples exhibit small shifts in the energy location of the various peaks as compared to those from a Cu standard. Annealing the Cu/sputtered A12O3 structure at 500°C produces a shoulder on the Cu 3d peak as well as a new Cu (L3 M4.5 M4.5) Auger feature. Neither of these effects are observed after similar treatment of the Cu/annealed A12O3 structure. An influence of this different bonding situation on the Cu-sapphire interfacial energy is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 60: Symposium L – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1985 , 331
Copyright
Copyright © Materials Research Society 1986

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References

1. Baglin, J.E.E., Proc. Mat. Res. Soc. 47, 3 (1985).Google Scholar
2. Johnson, K.H. and Pepper, S.V., J. Appl. Phys. 53 6634 (1982).CrossRefGoogle Scholar
3. Hofmann, S. and Thomas, J.H. III, J.Vac. Sci. Technol. Bl, 43 (1983).CrossRefGoogle Scholar
4. Mclntyre, N.S., Sunder, S, Shoesmith, D.W., and Stanchell, F.W., J. Vac. Sci. Technol. 18, 714, (1981).Google Scholar
5. Kowalczyk, S.P., Ley, L., McFeely, F.R., Pollak, R.A., and Shirley, D.A., Phys. Rev. B9, 381 (1974).CrossRefGoogle Scholar
6. Gaarenstroom, S.W., and Winograd, N., J. Chem. Phys. 67, 3500 (1977).Google Scholar
7. Frost, D.C., McDowell, C.A. and Tapping, R.L., J. Electron spectrosc. Relat. Phenom. 6, 347 (1975).Google Scholar
8. Rosencwaig, A., and Wertheim, G.K., J. Electron Spectrosc. Relat. Phenom. 1, 493 (1972).Google Scholar
9. Chaklader, A.C.D., Armstrong, A.M., and Misra, S.K., J.Amer. Ceram. Soc. 51, 630 (1968).Google Scholar