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Interactions of Copper with Interlayer Dielectrics and Adhesion Promoters / Diffusion Barriers.

Published online by Cambridge University Press:  25 February 2011

B. Arcot ,
Y.T. Shy ,
S.P. Murarka ,
C. Shepard  and
W.A. Lanford
S.P. Murarka
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180
W.A. Lanford
Affiliation:
State University of New York at Albany, Albany, NY 12222
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Abstract

Copper with its high conductivity, specific heat and melting point (compared to Al), is being investigated as the interconnection metal for applications both on and off the chip. Such interconnection wirings will be seperated by the dielectric layers which could be either polymers or inorganic oxides like SiO2. In such applications an adhesion promoter, which may also work as a diffusion barrier, maybe used between the dielectric and the metal film. An investigation of the diffusion and interaction of Copper with such dielectrics and insulators has been carried out in the temperature range of 200 – 500 ºC. Specifically, interactions of Copper with SiO2'P—glass, Polyimidesiloxane and Magnesium are investigated. Results of these studies will be presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 27
Copyright
Copyright © Materials Research Society 1991

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References

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