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Interconnect Reliability Study Using a Microscopic Nucleation Model for Electromigration

Published online by Cambridge University Press:  10 February 2011

M. Tammaro  and
B. Setlik
M. Tammaro
Affiliation:
Department of Physics, University of Rhode Island, Kingston RI 02881 Tammaro@phys.uri.edu
B. Setlik
Affiliation:
Department of Physics, University of Rhode Island, Kingston RI 02881 Tammaro@phys.uri.edu
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Abstract

A microscopic nucleation model for electromigration is proposed. The solution to the master equations for site occupancy produces a variable current exponent with 1 < n < 2. These results disprove previous claims that n = 2 in nucleation models. We also address the long-standing speculation regarding an additional temperature dependence in Black's equation. Under the premise that the activation energy in Black's equation, E a , should be equal to the energy barrier for atomic hopping, we provide evidence for an additional T 2 dependence of the failure time. Microscopic modeling provides an explicit connection between the macroscopic model behavior and the microscopic parameters of the model. A continuum treatment of our model is derived and compared with standard continuum treatments.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 83
Copyright
Copyright © Materials Research Society 1999

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References

[1] Ho, P.S. and Kwok, T., Rep. Prog. Phys. 52, 301 (1989); and references therein.Google Scholar
[2] Black, J.R., in Proceedings of the 6th Annual International Reliability Physics Symposium (Proc. IEEE, New York, 1967), P. 148.Google Scholar
[3] Hu, C.-K., Thin Sol. Films 260, 124 (1995).Google Scholar
[4] Hu, C.K., Small, M.B.. and Ho, P.S., J. Appl. Phys. 74, 969 (1993).Google Scholar
[5] Shih, W. C. and Greer, A. L., J. Appl. Phys. 84, 2551 (1998).Google Scholar
[6] Wu, Kang and Bradley, Mark, Phys. Rev. B. 50, 12468 (1994).Google Scholar
[7] Shatzkes, M. and Lloyd, J. R., J. Appl. Phys. 59, 3891 (1986).Google Scholar
[8] Setlik, B., Aubin, K., Heskett, D.. and Briere, M. A., Proceedings of the University-Government-Industry Microelectronics Symposium (Proc. IEEE, New York, 1997) P. 159Google Scholar
[9] Ho, P. S. and Kwok, T., Rep. Prog. Phys. 52, 301 (1989).Google Scholar
[10] Oates, A.S., Appl. Phys. Lett. 66, 1475 (1995).Google Scholar
[11] Clement, J. J., J. Appl. Phys. 82, 5991 (1997).Google Scholar
[12] Clement, J. J. and Lloyd, J. R., J. Appl. Phys. 71, 1729 (1992).Google Scholar
[13] Nix, W. D. and Artz, E., Met. Trans. A 23 2007 (1992).Google Scholar
[14] Tammaro, M., Sabella, M.. and Evans, J. W., J. Chem. Phys. 103, 10277 (1995).Google Scholar
[15] Dekker, J. P. and Lodder, A., J. Appl. Phys. 84, 1958 (1998).Google Scholar
[16] Schreiber, H.-U. and Grabe, B., Solid-State Electr. 24, 1135 (1981).Google Scholar