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Interdiffusion in Metallic Layers

Published online by Cambridge University Press:  21 February 2011

A. Bourret
Affiliation:
DRF, Service de Physique, CENG 85 X, 38041 Grenoble, France
J. L. Rouviere
Affiliation:
DRF, Service de Physique, CENG 85 X, 38041 Grenoble, France
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Abstract

The atomic structure of ion-sputtered Fe/Ti multilayers with an average composition FeTi2 is studied by high resolution electron microscopy. A systematic use of diffractometry is made to measure the local parameter change as well as to recognise the crystalline phase. Local lattice parameter changes are attributed to compositional changes indicating interdiffusion at a scale of 1.8 nm. The phases are very dependent on the multilayer period, Λ. For small periods, Λ < 4 nm, the layers are amorphous. For intermediate periods 4 nm < Λ < 8 nm the Ti-rich layer is crystalline. And for larger periods both the Fe-rich and the Ti-rich layers are crystalline. These observations are explained in terms of a growth model, assuming a constant depth of mixing during sputtering.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

1. Etienne, P., Creuzet, G., Friedrich, A., Dau, F. Nguyen Ven, Fert, A. and Massies, J., Appl. Phys. Lett. 53, 162 (1988)Google Scholar
2. Maurer, M., Ousset, J.C., Ravet, M.F. and Picut, M., Europhysics Lett. 9, 803 (1989)Google Scholar
3. Chappert, C. and Bruno, P., J. of Appl. Phys. 64, 5736 (1988)Google Scholar
4. Flevaris, N.K., Karakostas, T. and Kumasaka, N., J. of Appl. Phys. 63, 3203 (1988)Google Scholar
5. Nagai, Y., Senda, M. and Toshima, T., J. of Appl. Phys. 63, 1136 (1988)Google Scholar
6. Dime, F.W.A., Broeder, F.J.A. Den, Tolboom, J.A.M., deWit, H.J. and Denissen, C.H.M., Appl. Phys. Lett. 53, 2386 (1988)Google Scholar
7. Clemens, B.M., J. of Appl. Phys. 61 4525 (1987)Google Scholar
8. Kozono, Y., Komuro, M., Narishige, S., Hanazono, M. and Sugita, Y. J. of Appl. Phys. 63 3470 (1988)Google Scholar
9. Rodmacq, B., Hillairet, J., Laugier, J. and Chamberod, A., J. of Physics : C in pressGoogle Scholar
10. Polycrystalline Semiconductors, Grain Boundaries and Interfaces, Edit. by Möller, H.J., Strunk, H.P. and Werner, J.H., Springer Proc. in Physics 35, Springer-Verlag Berlin (1989)Google Scholar
11. Pennycook, S.J. and Boatner, L.A., Nature 336, 565 (1988)Google Scholar
12. Ourmazd, A., Taylor, D.W., Cunningham, J. and Tu, C.W., Phys. Rev. Lett. 62, 933 (1989)Google Scholar
13. Baxter, C.S. and Stobbs, W.M., Nature 322, 814 (1986)Google Scholar
14. Petford-Long, A.K., Stearns, M.B., Chang, C.H., Nutt, S.R., Stearns, D. G., Ceglio, N.M., Hawryluk, A.M., J. of Appl. Phys. 61, 1422 (1987)Google Scholar
15. Chang, C.H., Structural properties of NiTi, CoSi, and MoSi multilayered thin films PhD Thesis, Arizona State University (1989)Google Scholar
16. Clemens, B.M. and Sinclair, R., MRS Bulletin 15, 2, 19 (1990)Google Scholar
17. Bourret, A. and Rouviere, J. L, Philos. Mag. in pressGoogle Scholar