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Interface and Electrical Properties of Atomic-layer-deposited HfAlO Gate Dielectric for N-channel GaAs MOSFETs

Published online by Cambridge University Press:  31 January 2011

Rahul Suri ,
Daniel J Lichtenwalner  and
Veena Misra
Rahul Suri
Affiliation:
rsuri@ncsu.edu, North Carolina State University, Electrical and Computer Engineering, Raleigh, North Carolina, United States
Daniel J Lichtenwalner
Affiliation:
djlichte@ncsu.edu, North Carolina State University, Materials Science and Engineering, Raleigh, North Carolina, United States
Veena Misra
Affiliation:
vmisra@ncsu.edu, North Carolina State University, Electrical and Computer Engineering, Raleigh, North Carolina, United States
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Abstract

The interface and electrical properties of HfAlO dielectric formed by atomic layer deposition (ALD) on sulfur-passivated GaAs were investigated. X-ray photoelectron spectroscopy (XPS) revealed the absence of arsenic oxides at the HfAlO/GaAs interface after dielectric growth and post-deposition annealing at 500 °C. A minimal increase in the amount of gallium oxides at the interface was detected between the as-deposited and annealed conditions highlighting the effectiveness of HfAlO in suppressing gallium oxide formation. An equivalent oxide thickness (EOT) of ∼ 2 nm has been achieved with a gate leakage current density of less than 10-4 A/cm2. These results testify a good dielectric interface with minimal interfacial oxides and open up potential for further investigation of HfAlO/GaAs gate stack properties to determine its viability for n-channel MOSFETs.

Keywords

III-Vdielectric propertieselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1155: Symposium C – CMOS Gate-Stack Scaling–Materials, Interfaces and Reliability Implications , 2009 , 1155-C10-06
Copyright
Copyright © Materials Research Society 2009

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