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The Interface for Cryogenic-Processed Metal/Inp

Published online by Cambridge University Press:  21 February 2011

L. He ,
W.A. Anderson ,
J. Palmer  and
Z. Shi
L. He
Affiliation:
Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, State University of New York at Buffalo, 217C Bonner Hall, Amherst, NY 14260
W.A. Anderson
Affiliation:
Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, State University of New York at Buffalo, 217C Bonner Hall, Amherst, NY 14260
J. Palmer
Affiliation:
Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, State University of New York at Buffalo, 217C Bonner Hall, Amherst, NY 14260
Z. Shi
Affiliation:
Emcore Corp., 35 Elizabeth Ave., Somerset, N.J. 08873
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Abstract

Au and Pd Schottky contacts to n-InP produce extremely high barrier heights and low leakage currents when deposition is on a substrate cooled to 77K. Extensive chemical and structural analyses indicate that this process causes the metal film to be continuous at 50Å, much better than in standard processing. Stoichiometry of InP near the surface is better maintained with this process. A thin P:O compound may exist at the interface which also contributes to a high barrier height.

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References

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