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Interface Recombination Velocities in Layered GaAs and AlGaAs/GaAs Structures Grown by OMVPE

Published online by Cambridge University Press:  26 February 2011

S. Bothra ,
R. Venkatasubramanian ,
S.K. Ghandhi  and
J.M. Borrego
S. Bothra
Affiliation:
Electrical, Computer and Systems Engineering Dept., Rensselaer Polytechnic Institute, Troy, N.Y. 12180
R. Venkatasubramanian
Affiliation:
Electrical, Computer and Systems Engineering Dept., Rensselaer Polytechnic Institute, Troy, N.Y. 12180
S.K. Ghandhi
Affiliation:
Electrical, Computer and Systems Engineering Dept., Rensselaer Polytechnic Institute, Troy, N.Y. 12180
J.M. Borrego
Affiliation:
Electrical, Computer and Systems Engineering Dept., Rensselaer Polytechnic Institute, Troy, N.Y. 12180
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Abstract

The interface recombination velocity at n+ GaAs/n GaAs and n+ Al15 Ga85 As/n GaAs are reported for various dopings. It is seen that with an n+ GaAs cap layer it is possible to reduce the interface recombination velocity to ∼ 4.4 × 103 cm/s. This can be further reduced by employing an AlGaAs cap, due to the increased barrier caused by the valence band discontinuity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 183
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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