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Interface Roughness in Strained Si/SiGe Multilayers

Published online by Cambridge University Press:  03 September 2012

A. A. Darhuber ,
V. Holy ,
J. Stangl ,
G. Bauer ,
J. NÜtzel  and
G. Abstreiter
A. A. Darhuber
Affiliation:
1Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria
V. Holy
Affiliation:
1Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria
J. Stangl
Affiliation:
1Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria
G. Bauer
Affiliation:
1Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria
J. NÜtzel
Affiliation:
2Walter Schottky Institut, TU München, Am Coulombwall 2, D-85748 Garching, Germany
G. Abstreiter
Affiliation:
2Walter Schottky Institut, TU München, Am Coulombwall 2, D-85748 Garching, Germany
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Abstract

Diffuse x-ray reflection from a SiGe/Si multilayer grown pseudomorphically on slightly miscut Si(OOl) substrates has been studied theoretically and experimentally. In the framework of the Distorted-Wave Born Approximation (DWBA), we demonstrated that the distribution of the diffusely scattered intensity gives conclusive information on both the amount and the in-plane and inter-plane correlation properties of the interface roughness. The best model for the description of the interface-morphology was found to be a combination of a two-level model and a staircase model.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 153
Copyright
Copyright © Materials Research Society 1997

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