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Interface Structures in Lateral Seeding Epitaxial Si on SiO2.

Published online by Cambridge University Press:  28 February 2011

Atsushi Ogura ,
Naoaki Aizaki  and
Hiroshi Terao
Atsushi Ogura
Affiliation:
Fundamental Research Laboratories, NEC Corporation 4-1-1 Miyazaki, Miyamae-ku, Kawasaki 213, Japan
Naoaki Aizaki
Affiliation:
Fundamental Research Laboratories, NEC Corporation 4-1-1 Miyazaki, Miyamae-ku, Kawasaki 213, Japan
Hiroshi Terao
Affiliation:
Fundamental Research Laboratories, NEC Corporation 4-1-1 Miyazaki, Miyamae-ku, Kawasaki 213, Japan
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Abstract

Si/SiO2 interface structures found in three types of lateral seeding epitaxy (lateral solid phase epitaxy; LSPE, epitaxial lateral over growth; ELO, and laser annealing; LA) were studied with a high resolution transmission electron microscope. The (001) Si/SiO2 interface found in the LSPE was thought to have similar flatness as its initial SiO2 surface. In the twin region of the ELO, where the (221)T plang should be parallel to the substrate, the Si/SiO2 interface was sawtoothed with (111)T and {110)T micro-facets. The (001) Si/SiO2 interface in the LA was flatter than that in the LSPE and nO twins were observed. However, the (115) Si/SiO2 interface was saw-toothed. In this case, both (111) and (111) twin boundaries were observed, and (111) and (110) interfaces were atomically flat. A reaction between the Si and SiO2 is expected to occur at their interface, and the appearance of atomically flat interface or saw-toothed facets with low-index planes (which may be thought to have low interface energy with SiO2 ) may be possibly attributed to such reaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 361
Copyright
Copyright © Materials Research Society 1989

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