Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-29T17:32:45.420Z Has data issue: false hasContentIssue false
  • English
  • Français

Interfacial Roughness in GaAs/A1GaAs Multilayers: Influence of Controlled Impurity Addition

Published online by Cambridge University Press:  21 February 2011

S. Nayak ,
J.M. Redwing ,
T.F. Kuech ,
D.E. Savage  and
M.G. Lagally
S. Nayak
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI-53706
J.M. Redwing
Affiliation:
Dept. of Chemical Engineering, University of Wisconsin, Madison, WI-53706
T.F. Kuech
Affiliation:
Dept. of Chemical Engineering, University of Wisconsin, Madison, WI-53706
D.E. Savage
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI-53706
M.G. Lagally
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI-53706
Get access

Extract

Impurities at heterointerfaces can alter the interfacial structure resulting in changes in physical, electrical and optical properties. We present a study of the interfacial roughness of GaAs/A1xGa1-xAs superlattices which were grown using controlled addition of oxygen at the interface. The interfacial properties were characterized by x-ray diffraction. The morphology of the surface was determined by Atomic Force Microscopy (AFM). X-ray diffraction measurements, both θ-2θ and rocking curves, were used to analyze the correlated and uncorrelated component of the interfacial roughness. A strong difference in the interfacial roughness was observed depending on whether the intentional oxygen incorporation occurred at the GaAs-to-A1GaAs interface or at both interfaces. When oxygen is incorporated at both interfaces, the x- ray reflectivity of the superlattice is decreased considerably resulting from a much higher interfacial roughness. The substrate miscut has a significant effect on RMS roughness, correlated roughness and its correlation length when oxygen is incorporated at the GaAs-to-A1xGa1-xAs interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 332: Symposium U – Determining Nanoscale Physical Properties of Materials by Microscopy and Spectroscopy , 1994 , 249
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Gammon, D., Shanabrook, B.V., and Katzer, D.S., Phy. Rev. Lett. 67, 1547 (1991).Google Scholar
2. Ourmarzd, A., Talyor, D.W., Cunningham, J. and Tu, C.W., Phy. Rev. Lett. 62, 933 (1989).Google Scholar
3. Warwick, C.A., Jan, W.Y., Ourmazd, A, and Harris, T.D., Appl. Phys. Lett 56, 2666 (1990).CrossRefGoogle Scholar
4. Chrzan, D. and Dutta, P., J. Appl. Phys. 59, 1504 (1986).Google Scholar
5. Singh, J. and Bajaj, K.K., J. Appl. Phy. 57 (12), 5433, (1985)Google Scholar
6. Singh, J. and Bajaj, K.K., Appl. Phy. Lett. 44 (11), 1075, (1985)Google Scholar
7. See for example, Brusina, R., Karunasiri, R.P.U. and Rudnick, J, Kinetics of Ordering and Growth at Surfaces, edited by Lagally, M.G. (Plenum, New York, 1990 ), p. 395 and references theirinGoogle Scholar
8. Sinha, S.K., Sirota, E.B., Garoff, S. and Stanly, H.B., Phys. Rev. B38, 2297 (1988).CrossRefGoogle Scholar
9. Savage, D.E., Kleiner, J., Schimke, N, Phang, Y.H., Jankowski, T., Jacobs, J., Kariotis, R., and Lagally, M.G., J Appl Phys. 69, 1411 (1991).CrossRefGoogle Scholar
10. Savage, D.E., Schonke, N., Phang, Y.H., and Lagally, M.G., J. Appl. Phys. 71, 3283 (1992)Google Scholar
11. Phang, Y.H., Savage, D.E, Kuech, T.F., Lagally, M.G., Park, J.S. and Wang, K.L., Appl. Phys. Lett. 60, 2988 (1992).Google Scholar
12 Kuech, T.F., Veuhoff, E., Kuan, T.S., Deline, V., and Potemski, R., J. Crystal Growth 77, 257 (1986)CrossRefGoogle Scholar
13 Huang, J.M., Gaines, D.F., Kuech, T.F., Potemski, R.M. and Cardone, F presented at 1993 EMC, Santa Barbara, CA, (1993) to be publishedGoogle Scholar
14 Nayak, S., Redwing, J.M., Kuech, T.F., Phang, Y.-H., Savage, D.E., and Lagally, M.G., Mat. Res.Soc. Symp.Proc. Vol. 312 (1993)Google Scholar