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Intermediate Layers in the A-Si:H Growth Processes

Published online by Cambridge University Press:  10 February 2011

A. A. Aivazov ,
N. V. Bodyagin  and
S. P. Vikhrov
A. A. Aivazov
Affiliation:
MT Faculty, The Moscow Institute of Electronic Technology, Moscow, Russia, root@mictec.zgrad.su
N. V. Bodyagin
Affiliation:
MT Faculty, The Moscow Institute of Electronic Technology, Moscow, Russia, root@mictec.zgrad.su
S. P. Vikhrov
Affiliation:
CR Faculty, The Radiotechnical Academy, Ryazan, Russia.
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Abstract

The intermediate layers (IL) exist at the boundary between liquid (plasma, gas) and solid phases during production processes of a-Si:H. The IL properties differ from the properties of the boundary regions anomaly. The substance in IL is in a strong nonequilibrium state of the bifurcation or the cascade of bifurcations. The processes in the IL determine the properties and the structure of the material being produced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 467
Copyright
Copyright © Materials Research Society 1996

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References

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