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Intrinsic Stress in a-Germanium Films Deposited by RF-Magnetron Sputtering

Published online by Cambridge University Press:  22 February 2011

D. Fahnline ,
B. Yang ,
K. Vedam ,
R. Messier  and
L. Pilione
D. Fahnline
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
B. Yang
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
K. Vedam
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
R. Messier
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
L. Pilione
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

Thin a-Ge films deposited by rf-magnetron sputtering undergo a change from compressive to tensile stress as the argon gas pressure is increased. Spectroscopic ellipsometry, neutron activation analysis, and a dual laser beam reflection technique were used to determine the film's void fraction content, Ar/Ge atomic percent, and stress, respectively. The results of these three measurements indicate that as the film's Ar/Ge content increases, the void fraction decreases and the intrinsic stress becomes compressive. These findings are consistent with currently accepted bombardment mechanisms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 130: Symposium C – Thin Films: Stresses and Mechanical Properties I , 1988 , 355
Copyright
Copyright © Materials Research Society 1989

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