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Inversion-Type Mos Field Effect Transistors Using CVD Grown Cubic SiC on Si

Published online by Cambridge University Press:  25 February 2011

K. Shibahara ,
T. Takeuchi ,
T. Saitoh ,
S. Nishino  and
H. Matsunami
K. Shibahara
Affiliation:
Kyoto University, Dept. of Elec. Eng., Sakyo, Kyoto 606, Japan
T. Takeuchi
Affiliation:
Kyoto University, Dept. of Elec. Eng., Sakyo, Kyoto 606, Japan
T. Saitoh
Affiliation:
Kyoto University, Dept. of Elec. Eng., Sakyo, Kyoto 606, Japan
S. Nishino
Affiliation:
Kyoto University, Dept. of Elec. Eng., Sakyo, Kyoto 606, Japan
H. Matsunami
Affiliation:
Kyoto University, Dept. of Elec. Eng., Sakyo, Kyoto 606, Japan
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Abstract

Inversion-type n-channel MOSFET's of cubic-SiC were successfully fabricated. MOSFET's were fabricated on an antiphase-domains free layer grown on Si(100) by carbonization and subsequent chemical vapor deposition. Ion implantation technique was used to form source and drain of MOSFET's. A gate oxide of SiO2 was formed by thermal oxidation of SiC. Inversion mode operation was confirmed for the first time. Annealing temperature dependence of electrical characteristics of P+ and N2+ implanted layer and characteristics of p-n junction diodes fabricated using ion implantation technique were also investigated.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 247
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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