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Inverted OLEDs with Electrically Doped Carrier Injection and Transport Layers

Published online by Cambridge University Press:  01 February 2011

Xiang Zhou ,
Martin Pfeiffer ,
Jing S. Huang ,
Jan Blochwitz ,
Ansgar Werner  and
Karl Leo
Xiang Zhou
Affiliation:
Institute fuer Angewandte Photophysik, Technische Universitaet Dresden, D-01062 Dresden, Germany
Martin Pfeiffer
Affiliation:
Institute fuer Angewandte Photophysik, Technische Universitaet Dresden, D-01062 Dresden, Germany
Jing S. Huang
Affiliation:
Institute fuer Angewandte Photophysik, Technische Universitaet Dresden, D-01062 Dresden, Germany
Jan Blochwitz
Affiliation:
Institute fuer Angewandte Photophysik, Technische Universitaet Dresden, D-01062 Dresden, Germany
Ansgar Werner
Affiliation:
Institute fuer Angewandte Photophysik, Technische Universitaet Dresden, D-01062 Dresden, Germany
Karl Leo
Affiliation:
Institute fuer Angewandte Photophysik, Technische Universitaet Dresden, D-01062 Dresden, Germany
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Abstract

Conventional organic light-emitting diodes (OLEDs) having electrically doped carrier injection and transport layers with high conductivity exhibit extremely low driving voltages, which is due to the formation of radical anions and cations and ohmic contacts at the electrode interfaces. We report here an inverted OLEDs with indium-tin-oxide (ITO) bottom contact as cathode for electron injection. The device comprise an intrinsic 8-tris-hydroxyquinoline aluminum (Alq3) emission layer sandwiched in between n- and p-doped charge transport layers.

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