Skip to main content
×
×
Home

Investigation of Deep Levels in GaP Liquid Phase Epitaxial Layers on Substrates with Vapor Pressure Heat Treatment

  • T. J. Yu (a1), K. Suto (a1) (a2) and J. Nishizawa (a1) (a3)
Abstract

We fabricated GaP liquid phase epitaxial layers with temperature difference method under controlled vapor pressure (TDM-CVP), successively to GaP substrate annealing at growth temperature (1133K) under various phosphorus vapor pressures around the optimum one (150 torr) for stoichiometric crystallization of GaP. Photocapacitance (PHCAP) and photoluminescence measurements have been carried out for characterizing GaP substrate crystals and the LPE layers and for revealing the mechanism of defect formation. Over one order of magnitude decrease of deep level densities in PHCAP has been observed after substrate crystals are annealed. Compared to the layers on substrates without heat treatment, similar tendency of deep level density deduction has been found in GaP LPE layers on heattreated substrates. In photoluminescence measurements, an obvious decrease of 700nm-band intensity from heat-treated substrates, as well as increases of green band intensities from GaP LPE layers on heat treated substrates, have been observed at 77K. Phosphorus interstitial is suggested to be possibly related to the origin of deep level centers in the GaP substrate crystals. It is considered that during the process of heat treatment at growth temperature, under the optimum phosphorous pressure, the defects in GaP substrate crystals reach an equilibrium state, so that their diffusion to the growth layer decreases greatly.

Copyright
References
Hide All
1. Nishizawa, J., Okuno, Y., and Tadano, H., J. Crystal Growth 31, 215(1975)
2. Nishizawa, J. and Okuno, Y., IEEE Trans. Electron Devices ED-22, 716 (1975)
3. Nishizawa, J., Okuno, Y., Koike, M., and Sakurai, F., Jpn. J. App. Phys. 19, 377(1980)
4. Suto, K. and Nishizawa, Jun-ichi J. AppI. Phys. 67 (1), 459 (1990)
5. Suto, K., Adachi, S., Yoneyama, T., Nishizawa, J., J. Crystal Growth 160, 13(1995)
6. Nishizawa, Jun-ichi, Oyama, Yutaka and Dezaki, Kazushi J. Phys.: Condens. Matter 3, 7269(1991)
7. Suezawa, M., Kasuya, A, Nishina, Y. and Sumino, K., J. Appl. Phys. 69, 1618(1991)
8. Dishman, J. M. and Daly, D.F., J. Appl. Phys., Vol. 43, 4693(1972)
9. Dominguz-Adame, F., Piqueras, J., and Fernandez, P., Appl. Phys. Lett. 58, 257(1991)
10. A, Mitonneau and A, Mircea, Solid State Commun. 30, 157(1979)
11. A, Ito, T, Sukegawa and J, Nishizawa, 1967 Technical Report of Professional Group on Semiconductor and Transistor, Institute of Electrical Communication Engineers of Japan
12. Yu, T. J., T Matsuo, Suto, K. and Nishizawa, J., J. of Electron. Mater. 27,1053 (1998)
13. Matsuo, T., Master Degree ThesisM, Tohoku University, Japan (1998)
14. Wang, Lei, Wolk, J.A., Hsu, L., and Hailer, E. E., Appl. Phys. Lett. 70, 1831(1997)
15. Nishizawa, Jun-ichi, Shiota, Ikuo and Oyama, Yutaka J. Phys. D: 19, 1073(1986)
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 1 *
Loading metrics...

Abstract views

Total abstract views: 45 *
Loading metrics...

* Views captured on Cambridge Core between September 2016 - 17th August 2018. This data will be updated every 24 hours.