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Investigation of Ga Diffusion in (001) and (111) CdTe Layers Grown on (001) GaAs

Published online by Cambridge University Press:  25 February 2011

J. J. Dubowski ,
J. M. Wrobel ,
J. A. Jackman  and
P. Becla
J. J. Dubowski
Affiliation:
Laboratory for Microstructural Sciences, NRCC, 100 Sussex Dr., Ottawa, Ont., Canada K1A 0R6
J. M. Wrobel
Affiliation:
Laboratory for Microstructural Sciences, NRCC, 100 Sussex Dr., Ottawa, Ont., Canada K1A 0R6
J. A. Jackman
Affiliation:
Metals Technology Laboratories, CANMET, 568 Booth St., Ottawa, Ont., Canada K1A 0G1
P. Becla
Affiliation:
Francis Bitter National Magnet Laboratory, MIT, Cambridge, Ma 02139, USA
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Abstract

A secondary ion mass spectroscopy study of Ga diffusion in CdTe grown on (001) GaAs was carried out. The layers were grown by pulsed laser evaporation and epitaxy. Two characteristic regions with increased Ga concentration were found. The first was the CdTe/GaAs interface where the concentration of Ga decreases rapidly to the detection limit of −8 × 1014 cm−3. This region was usually less than 300 nm wide. The second was a surface region with a Ga accumulation of up to −1017 cm−3. Ion imaging revealed that in the (001) CdTe layers, Ga accumulates near the surface at localized spots, up to about 8 μm in diameter. This feature is less apparent in the (111) CdTe layers. Annealing at 500 °C for 1 h increased the Ga concentration in the whole layer to above 1016 cm−3. We also observe thermal annealing induced precipitation of Ga at the surface of bulk CdTe samples which were originally uniformly doped with Ga.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 143
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Giess, J., Gough, J.S., Irvine, S.J.C., Blackmore, G.W., Mullin, J.B., and Royle, A., J. Cryst. Growth 72, 120 (1985).Google Scholar
2. Kay, R., Bean, R., and Zanio, K., Appl. Phys. Letters 51, 2211 (1987).Google Scholar
3. Korenstein, R. and MacLeod, B., J. Cryst. Growth 86, 382 (1988).Google Scholar
4. Wagner, B.K., Oakes, J.D., and Summers, C.J., J. Cryst. Growth 86, 296 (1988).Google Scholar
5. Dubowski, J.J., Chemtronics 3, 66 (1988).Google Scholar
6. Dubowski, J.J., Williams, D.F., Sewell, P.B., and Norman, P., Appl. Phys. Letters 46, 1081 (1985).Google Scholar
7. Dubowski, J.J., Williams, D.F., Wrobel, J.M., Sewell, P.B., LeGeyt, J., Halpin, C., and Todd, D., Can J. Phys. (to be published).Google Scholar
8. Noad, J. (unpublished results).Google Scholar
9. Wrobel, J.M., Dubowski, J.J., and Becla, P., presented at the 1988 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride, Orlando, FL, 1988 (to be published in J. Vac. Sci. Technol.).Google Scholar
10. Bubulac, L.O., Bajaj, J., Tennant, W.E., Newman, P.R. and Lo, D.S., J. Cryst. Growth 86, 536 (1988).Google Scholar
11. Dubowski, J.J., Wrobel, J.M., Mitchell, D.F., and Sproule, G.I., J. Cryst. Growth 94, (to be published).Google Scholar
12. Lagally, M.G. and Welkie, D.G., Surf. Int. Analysis 3 (1), 8 (1981).Google Scholar