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Investigation of Irradiation Damage in Silicon DioxidePolymorphs using Cathodoluminescence Microanalysis.

Published online by Cambridge University Press:  17 March 2011

Marion A. Stevens-Kalceff
Marion A. Stevens-Kalceff*
Affiliation:
Department of Applied Physics, University of Technology, Sydney. PO Box 123 Broadway NSW 2007 AUSTRALIA Marion.Stevens-Kalceff@uts.edu.au
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Abstract

Cathodoluminescence (CL) Microanalysis (spectroscopy and microscopy)provides unique high sensitivity, high spatial resolution information aboutthe defect structure and distribution of defects in wide band gap materialsand therefore is an ideal technique with which to investigate themicrostructural processes induced by irradiation. CL microanalyticaltechniques allow the in situ monitoring and post irradiation assessment ofelectron irradiation induced damage. Changes in the defect structure andsurface topography of electron irradiated silicon dioxide polymorphs andrelated silicates including pure crystal quartz, pure silica glasses, pureamorphous fused quartz and alkali-borosilicate glasses, have beeninvestigated and compared using CL microanalysis and Scanning ProbeMicroscopy (SPM) techniques. CL and SPM evidence shows all specimens aresensitive to electron irradiation. CL evidence is consistent with theproduction and micro-segregation of irradiation induced defects. Theobserved damage is highly correlated with the electron irradiation inducedchanges in the surface topography of the investigated specimens.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O14.5/R9.5
Copyright
Copyright © Materials Research Society 2001

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