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Investigation of Point Defects in Si by Impurity Diffusion

Published online by Cambridge University Press:  21 February 2011

Shoichi Mizuo  and
Hisayuki Higuchi
Shoichi Mizuo
Affiliation:
Central Research Laboratory, Hitachi Ltd., 1-280 Higashikoigakubo, Kokubunji, Tokyo 185
Hisayuki Higuchi
Affiliation:
Central Research Laboratory, Hitachi Ltd., 1-280 Higashikoigakubo, Kokubunji, Tokyo 185
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Abstract

Our investigation of impurity diffusion in Si has clarified diffusion mechanisms and the point defect structure for the material. Thermal equilibrium between interstitials and vacancies in high temperature Si was clarified through observation of oxidation-retarded diffusion (ORD) of Sb in Si. Boron, Phosphorus, Aluminum and Galium were found to diffuse mainly due to an interstitialcy mechanism, while Sb did by a vacancy mechanism. Moreover, the atomic number in Si crystal compared to that at lattice sites was seen to play a dominant role in determining point defect concentration. Oxidation of Si and nitridation of SiO2 on Si lead to an increase in the atomic number of Si crystals and cause an increase in interstitial concentration as well as a decrease in vacancy concentration. On the other hand, nitridation of Si leads to a decrease in atomic number and causes vacancy super-saturation as well as interstitial under-saturation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 125
Copyright
Copyright © Materials Research Society 1985

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References

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