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Investigation of Thin Pd-Ge Layer Formation Using Synchrotron Vacuum Ultraviolet Photoemission Spectroscopy

Published online by Cambridge University Press:  25 February 2011

P. L. Meissner ,
J. C. Bravman ,
T. Kendelewicz ,
K. Miyano ,
W. E. Spicer ,
J. C. Woicik  and
C. Bouldin
P. L. Meissner
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA
J. C. Bravman
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA
T. Kendelewicz
Affiliation:
Stanford University, Stanford Electronics Laboratory, Stanford CA
K. Miyano
Affiliation:
Stanford University, Stanford Electronics Laboratory, Stanford CA
W. E. Spicer
Affiliation:
Stanford University, Stanford Electronics Laboratory, Stanford CA
J. C. Woicik
Affiliation:
National Institute of Standards and Technology, Semiconductor Electronics Division, Gaithersburg, MD
C. Bouldin
Affiliation:
National Institute of Standards and Technology, Semiconductor Electronics Division, Gaithersburg, MD
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Abstract

The formation of Pd-Ge layers was studied as a function of deposition and annealing using synchrotron Ultraviolet Photoemission Spectroscopy (UPS). Pd depositions ranging in thickness from 0.5 monolayers (ML) to 44 ML were examined in-situ on Ge (111) cleaved in ultra-high vacuum. The primary reaction components appear to be Pd2Ge and PdGe. Comparison of bulk and surface sensitive Ge 3d core levels for even the highest coverages indicates that Ge segregates to the surface at room temperature. Such low temperature segregation suggests that Ge can diffuse via a rapid diffusion mechanism.

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Articles
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MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 265
Copyright
Copyright © Materials Research Society 1990

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References

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