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Investigation On Subsurface Damage In Silicon Wafers

Published online by Cambridge University Press:  15 February 2011

Xin Zhang ,
Tong-Yi Zhang ,
Yitshak Zohar  and
Sanboh Lee
Xin Zhang
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong.
Tong-Yi Zhang
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong.
Yitshak Zohar
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong.
Sanboh Lee
Affiliation:
Department of Materials Science and Engineering, National Tsinghua University, Taiwan.
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Abstract

Micro-Raman spectroscopy and chemical etching were applied to determine the depth of subsurface damage in silicon wafers undergoing different machining processes: cutting, grinding, polishing and lapping. In comparison with the Raman spectrum of perfect single crystal silicon, both the shape and intensity at the shoulder (500 cm−1) and the subpeak (300 cm−1) spectral regions were changed in all the machined wafers. The intensities at shoulder and subpeak gradually decreased and finally resumed to normal, as the depth of the investigated layer increased. According to the chemical etch rate, the depth of the subsurface damage was thus evaluated for the different wafers. TEM observations further confirmed the obtained results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 199
Copyright
Copyright © Materials Research Society 1997

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