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Ion Beam Induced Amorphization and Crystallization Processes in Silicon and GaAs

Published online by Cambridge University Press:  28 February 2011

R. G. Elliman ,
J. S. Williams ,
S. T. Johnson  and
E. Nygren
R. G. Elliman
Affiliation:
CSIRO Chemical Physics, Clayton 3168, Australia.
J. S. Williams
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia.
S. T. Johnson
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia.
E. Nygren
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia.
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Abstract

Thin amorphous layers in crystalline Si and GaAs substates have been irradiated at selected temperatures with 1.5 MeV Ne+ ions to induce either epitaxial crystallization or amorphization. In Si, such irradiation can induce complete epitaxial crystallization of a 1000 A surface amorphous layer for temperatures typically >200°C whereas, at significantly lower temperatures, layer-by-layer amorphization results. Although epitaxial crystallization can also be stimulated in GaAs by ion irradiation at temperatures >65°C, the process is non-linear with ion dose and results in poor quality crystal growth for amorphous layers greater than a few hundred Angstroms in thickness. Layer-by-layer amorphization has not been observed in GaAs.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 471
Copyright
Copyright © Materials Research Society 1987

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References

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