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Ion Beam Modification of Cluster-Covered Silicon Surfaces

Published online by Cambridge University Press:  03 September 2012

O. V. Gulko  and
M. T. Zinke-Allmang
O. V. Gulko
Affiliation:
Physics and Astronomy Department, University of Western Ontario, London, Ontario, Canada N6A 3K7, ogulko@julian.uwo.ca, mzinke@uwo.ca
M. T. Zinke-Allmang
Affiliation:
Physics and Astronomy Department, University of Western Ontario, London, Ontario, Canada N6A 3K7, ogulko@julian.uwo.ca, mzinke@uwo.ca
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Abstract

Clusters of independently tailored areal density and size distribution were grown on semiconductor surfaces in ultra-high vacuum and used as masks for selective ion beam modification. First studies were undertaken to characterize the vertical interface between areas exposed to low energy ion beams and areas covered by clusters (crystalline silicon). Selective etching was employed to create a patterned surface as a substrate for heteroepitaxial growth of thick Ge layers to test defect density reduction due to finite size growth areas. The quality of the overlayers is discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 167
Copyright
Copyright © Materials Research Society 1997

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References

1. van der Merwe, J.H., J.Appl. Phys. 34, 117; van der Merwe, J.H., J.Appl. Phys. 34, 117 p. 123 (1963).Google Scholar
2. People, R. and Bean, J.C., Appl. Phys. Lett. 47, 322 (1985).Google Scholar
3. Luryi, S., Suhir, E., Appl. Phys. Lett. 49 (3), 140 (1986).Google Scholar
4. Ishizaka, A., Ya.Shiraki. J.Electrochem. Soc. 133 (4), 666 (1986).Google Scholar
5. 1ML of Sn on Si (111) corresponds to 7.832×1014 at/cm2 Google Scholar
6.TRIM by Ziegler, J.F., Biersack, J.P.. The stopping and Range of Ions in Solids, ISBN 0-08-021603-X.Google Scholar
7.CRC Handbook of Metal Etchants p.998.Google Scholar
8. As a reference virgin Si after wet chemical and thermal cleaning shows surface peaks of 15 Å.Google Scholar
9. Cliche, L., Roorda, S., Chicoine, M., Masut, R., Phys.Rev. Lett. 75 (12), 2348 (1995).Google Scholar