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Ion Beam Processing of GaAs at Elevated Temperatures

Published online by Cambridge University Press:  26 February 2011

J. S. Williams ,
R. G. Elliman ,
S. T. Johnson ,
D. K. Sengupta  and
J. M. Zemanski
J. S. Williams
Affiliation:
Also: Department of Electronic Materials Engineering, R.S. Phys S., ANU, Canberra 2600, Australia.
R. G. Elliman
Affiliation:
Microelectronics and Materials Technology Centre, RMIT Melbourne 3000, Australia.
S. T. Johnson
Affiliation:
Microelectronics and Materials Technology Centre, RMIT Melbourne 3000, Australia.
D. K. Sengupta
Affiliation:
Microelectronics and Materials Technology Centre, RMIT Melbourne 3000, Australia.
J. M. Zemanski
Affiliation:
Microelectronics and Materials Technology Centre, RMIT Melbourne 3000, Australia.
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Abstract

Elevated temperature ion bombardment of GaAs has been examined to investigate the nature of residual damage and the interplay between bombardment-induced defect production and dynamic annealing. The nature of disorder is found to depend strongly on ion energy, species, dose, dose rate and substrate temperature. A temperature regime is identified in which dynamic annealing leads both to the efficient formation of band gap traps for carrier removal and to the low temperature crystallization of pre-existing amorphous layers.

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References

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